Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 236/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
RD3P130SPFRA IS A POWER MOSFET W |
3.618 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta) | 4V, 10V | 200mOhm @ 6.5A, 10V | 2.5V @ 1mA | 40nC @ 10V | ±20V | 2400pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 60V 35A DPAK |
6.426 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 4.5V, 10V | 17mOhm @ 17.5A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | ±16V | 1700pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
PCH -100V -13A POWER MOSFET |
3.600 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta) | 4V, 10V | 200mOhm @ 6.5A, 10V | 2.5V @ 1mA | 40nC @ 10V | ±20V | 2400pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 100A TO252AA |
6.696 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3.4mOhm @ 20A, 10V | 3.5V @ 250µA | 124nC @ 10V | ±20V | 7349pF @ 15V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A TO252AA |
7.488 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 20A, 10V | 3.5V @ 250µA | 105nC @ 10V | ±20V | 6700pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 25V 80A DPAK |
5.472 |
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STripFET™ V | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 5V, 10V | 4.5mOhm @ 40A, 10V | 1V @ 250µA | 13.4nC @ 5V | ±22V | 1817pF @ 25V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N CH 40V 22A POWER 56 |
3.654 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 76A (Tc) | 4.5V, 10V | 3.1mOhm @ 22A, 10V | 3V @ 250µA | 64nC @ 10V | ±20V | 4545pF @ 20V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 100A TO252AA |
3.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 20A, 10V | 3.5V @ 250µA | 105nC @ 10V | ±20V | 6700pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 30V 27A PWRFLAT6X5 |
6.588 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 13mOhm @ 6.5A, 10V | 1V @ 250µA | 12nC @ 4.5V | ±16V | 965pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
29.976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
8.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 15A 8-SOP |
7.092 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 10A (Ta) | 10V | 112mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | ±20V | 1100pF @ 100V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 650V 4A DPAK |
6.840 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 1.35Ohm @ 2A, 10V | 4V @ 250µA | 9.8nC @ 10V | ±25V | 226pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 18.6A 8-SOIC |
2.340 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 18.6A (Ta) | 4.5V, 10V | 4.5mOhm @ 18.6A, 10V | 3V @ 250µA | 144nC @ 10V | ±20V | 7535pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC |
7.344 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.2V @ 250µA | 161nC @ 10V | ±16V | 6670pF @ 15V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 14A D2PAK |
15.180 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26nC @ 10V | ±20V | 670pF @ 25V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 60V 7.5A 8-SOIC |
7.542 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 60V | 7.5A (Tc) | 5V, 10V | 19.5mOhm @ 3.5A, 10V | 1V @ 250µA | 34nC @ 4.5V | ±16V | 1700pF @ 25V | - | 2.5W (Tc) | 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A DPAK |
4.068 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 800mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 20V 14A 1212-8 |
2.268 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta) | 4.5V, 10V | 4.9mOhm @ 22A, 10V | 2V @ 250µA | 30nC @ 4.5V | ±16V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 150A SOP8 |
3.780 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 75V | 150A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 1mA | 72nC @ 10V | ±20V | 6000pF @ 37.5V | - | 142W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Central Semiconductor Corp |
MOSFET N-CH 7A 600V DPAK |
6.768 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 580mOhm @ 3.5A, 10V | 4V @ 250µA | 14.5nC @ 10V | 30V | 440pF @ 100V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 620V 3.8A DPAK |
4.086 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 1.95Ohm @ 1.9A, 10V | 4.5V @ 50µA | 14nC @ 10V | ±30V | 450pF @ 50V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 50A D2PK TO263 |
20.124 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 7.5V, 10V | 8.9mOhm @ 20A, 10V | 4V @ 250µA | 50nC @ 10V | ±20V | 1950pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 6A 1212-8 PPAK |
5.958 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 21mOhm @ 9.5A, 10V | 3V @ 250µA | 45nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Texas Instruments |
MOSFET N-CH 30V 100A 8SON |
6.714 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 1.8V @ 250µA | 13nC @ 4.5V | ±20V | 1980pF @ 15V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 200V 2.2A POWER33-8 |
7.668 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 2.2A (Ta), 9.5A (Tc) | 6V, 10V | 200mOhm @ 2.2A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 960pF @ 100V | - | 2.1W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 250V 13A DPAK |
3.708 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 235mOhm @ 6.5A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 680pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET |
7.902 |
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Automotive, AEC-Q101, MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 3.4nC @ 10V | ±30V | 105pF @ 100V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 620V 2.7A D2PAK |
14.418 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 2.7A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4.5V @ 50µA | 13nC @ 10V | ±30V | 385pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 27.8A PPAK SO-8 |
3.834 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 27.8A (Tc) | 4.5V, 10V | 23mOhm @ 10A, 10V | 2.8V @ 250µA | 29.5nC @ 10V | ±20V | 900pF @ 50V | - | 5W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |