Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 234/999
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Teilenummer |
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO-262 |
16.452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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EPC |
TRANS GAN 100V DIE 4MOHM |
18.876 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 48A | 5V | 3.8mOhm @ 25A, 5V | 2.5V @ 9mA | 14.8nC @ 5V | +6V, -4V | 1895pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Panasonic Electronic Components |
MOSFET N-CH 30V 25A 8HSO |
2.358 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 103A (Tc) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 3V @ 5.85mA | 37nC @ 4.5V | ±20V | 6860pF @ 10V | - | 2.5W (Ta), 40W (Tc) | 150°C (TJ) | Surface Mount | HSO8-F4-B | 8-PowerSMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 60V 32.1A 8-SO |
2.970 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 32.1A (Tc) | 4.5V, 10V | 4.2mOhm @ 20A, 10V | 2.6V @ 250µA | 60nC @ 10V | ±20V | 3175pF @ 30V | - | 7.8W (Tc) | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 100A TO252AA |
5.940 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 20A, 10V | 2.5V @ 250µA | 116nC @ 10V | ±20V | 6316pF @ 15V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V 50A DPAK |
2.142 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 3.8mOhm @ 20A, 10V | 3.5V @ 250µA | 105nC @ 10V | ±20V | 6700pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-4, DPak (3 Leads + Tab) |
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Microchip Technology |
MOSFET P-CH 30V 1.1A SOT89-3 |
4.518 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.1A (Tj) | 4.5V, 10V | 600mOhm @ 1.5A, 10V | 3.5V @ 10mA | - | ±20V | 300pF @ 25V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA (SOT-89) | TO-243AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 700V 4.5A TO252 |
6.876 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7nC @ 10V | ±30V | 482pF @ 100V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
SUPERFET3 650V DPAK |
7.740 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 360mOhm @ 5A, 10V | 4.5V @ 1mA | 18nC @ 10V | ±30V | 730pF @ 400V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET N-CH 7A 650V DPAK |
5.868 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Ta) | 10V | 1.5Ohm @ 3.5A, 10V | 4V @ 250µA | 16.8nC @ 10V | 30V | 754pF @ 25V | - | 1.12W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 18.2A 8-SOIC |
4.860 |
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TrenchFET®, WFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 18.2A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1220pF @ 15V | - | 3W (Ta), 5.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 100V 100A VSONP |
21.300 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 9.4mOhm @ 13A, 10V | 3.4V @ 250µA | 35nC @ 10V | ±20V | 2670pF @ 50V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
7.884 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta) | 4.5V, 10V | 4.2mOhm @ 25A, 10V | 3V @ 250µA | 40nC @ 4.5V | ±20V | 3775pF @ 15V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Rohm Semiconductor |
RD3P175SNFRA IS A POWER MOSFET W |
5.094 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta) | 4V, 10V | 105mOhm @ 8.8A, 10V | 2.5V @ 1mA | 24nC @ 10V | ±20V | 950pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 800V 6A DPAK |
6.192 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 850mOhm @ 3A, 10V | 4.5V @ 600µA | 29nC @ 10V | ±20V | 1315pF @ 100V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 60V 14A U8FL |
2.484 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 52mOhm @ 7A, 10V | 3V @ 250µA | 25nC @ 10V | ±20V | 1258pF @ 25V | - | 3.2W (Ta), 21W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 5.6A 8TSON |
2.844 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 250V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 100V | - | 700mW (Ta), 39W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK SO-8 |
7.974 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.8A, 10V | 3V @ 250µA | 26nC @ 10V | ±20V | 1220pF @ 15V | - | 5W (Ta), 37.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
3.258 |
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- | P-Channel | MOSFET (Metal Oxide) | 400V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 270pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CHANNEL 80V 90A TO252 |
6.084 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 7.9mOhm @ 80A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 2530pF @ 40V | - | 150W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 24V 12.5A DPAK |
5.652 |
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- | N-Channel | MOSFET (Metal Oxide) | 24V | 12.5A (Ta), 110A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2V @ 250µA | 28nC @ 4.5V | ±20V | 3440pF @ 20V | - | 1.5W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 7A DPAK |
5.202 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 920pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 15A POWER56 |
7.308 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 29A (Tc) | 4.5V, 10V | 7.5mOhm @ 15A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 1190pF @ 13V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
3.690 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 75A ATPAK |
5.292 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 75A (Ta) | 4.5V, 10V | 8.4mOhm @ 38A, 10V | - | 76nC @ 10V | ±20V | 3950pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | ATPAK | ATPAK (2 leads+tab) |
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Vishay Siliconix |
MOSFET P-CHANNEL 30V 22A 8SOIC |
3.562 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 113nC @ 10V | ±20V | - | - | 7W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 100V 30A 1212-8 PPAK |
7.956 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Tc) | 4.5V, 10V | 29mOhm @ 10A, 10V | 3V @ 250µA | 21.5nC @ 10V | ±20V | 611pF @ 50V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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STMicroelectronics |
MOSFET P-CH 30V 6A POWERFLAT |
7.218 |
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STripFET™ H6 | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Tc) | 4.5V, 10V | 30mOhm @ 3A, 10V | 1V @ 250µA (Min) | 12nC @ 4.5V | ±20V | 1450pF @ 25V | - | 2.9W (Tc) | 150°C (TJ) | Surface Mount | PowerFlat™ (3.3x3.3) | 8-PowerVDFN |