Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 187/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET EF SERIES 600V TO-220 FUL |
20.940 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 2700pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
HIGH POWER_NEW |
8.772 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | ±20V | 2103pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
TRENCH_MOSFETS |
9.192 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | - | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 278µA | 270nC @ 10V | ±20V | 12020pF @ 50V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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IXYS |
200V/90A ULTRA JUNCTION X3-CLASS |
7.092 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78nC @ 10V | ±20V | 5420pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
8.640 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 300V 43.5A TO-3P |
9.708 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 43.5A (Tc) | 10V | 69mOhm @ 21.75A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 5600pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 38A TO247 |
15.024 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 11.7A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 2587pF @ 100V | - | 329W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 22A I2PAK |
23.352 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64nC @ 10V | ±25V | 2880pF @ 100V | - | 140W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
SUPERFET3 650V TO247 PKG |
8.532 |
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* | N-Channel | MOSFET (Metal Oxide) | 650V | 44A (Tc) | 10V | 72mOhm @ 22A, 10V | 4.5V @ 1mA | 82nC @ 10V | ±30V | 3300pF @ 400V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
TRENCH_MOSFETS |
7.956 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET TO247-4 |
7.992 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 48A (Tc) | 10V | 60mOhm @ 15.9A, 10V | 4V @ 800µA | 67nC @ 10V | ±20V | 2895pF @ 400V | - | 164W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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STMicroelectronics |
MOSFET N-CH 650V 24A I2PAK |
23.856 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | ±25V | 3320pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 650V 24A TO-220 |
8.592 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 119mOhm @ 12A, 10V | 5V @ 250µA | 72nC @ 10V | ±25V | 3320pF @ 100V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 5.4A I2PAKFP |
16.104 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.4A (Tc) | 10V | 1.3Ohm @ 2.7A, 10V | 4.5V @ 50µA | 33nC @ 10V | ±30V | 880pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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STMicroelectronics |
MOSFET N-CH 600V 23A TO220FP |
17.508 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2090pF @ 100V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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IXYS |
300V/56A ULTRA JUNCTION X3-CLASS |
6.972 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56nC @ 10V | ±20V | 3.75nF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
6.876 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V TO247AC |
11.868 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 2700pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 31.2A TO247 |
10.536 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | ±20V | 3240pF @ 100V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Cree/Wolfspeed |
E-SERIES 900V, 120 MOHM, G3 SIC |
18.552 |
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Automotive, AEC-Q101, E | N-Channel | SiCFET (Silicon Carbide) | 900V | 23A (Tc) | 15V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 17.3nC @ 15V | +18V, -8V | 350pF @ 600V | - | 97W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-3P |
8.988 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 70mOhm @ 23.5A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET IFX OPTIMOS TO247 |
8.652 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 100A | 10V | 19mOhm @ 45A, 10V | 4V @ 270µA | 191nC @ 10V | ±20V | 10030pF @ 50V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 500V 40A TO-264 |
9.780 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 110mOhm @ 20A, 10V | 5V @ 250µA | 200nC @ 10V | ±30V | 7500pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3 | TO-264-3, TO-264AA |
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STMicroelectronics |
MOSFET N-CH 300V 60A TO-247 |
15.492 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4V @ 250µA | 164nC @ 10V | ±20V | 5930pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N CH 550V 33A TO-247 |
7.980 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 33A (Tc) | 10V | 80mOhm @ 16.5A, 10V | 5V @ 250µA | 62nC @ 10V | ±25V | 2950pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 27A TO-220FP |
11.532 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 27A (Tc) | 10V | 98mOhm @ 13.5A, 10V | 5V @ 250µA | 83nC @ 10V | ±25V | 3750pF @ 100V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V TO-247-3 |
7.968 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64nC @ 10V | ±20V | 3020pF @ 400V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 40A |
9.252 |
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MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 79mOhm @ 20A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 3250pF @ 100V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 34A TO220FP |
12.963 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 34A I2PAKFP |
8.730 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57nC @ 10V | ±25V | 2500pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |