Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 186/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 250V 69A TO247AC |
7.866 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 69A (Tc) | 10V | 22mOhm @ 41A, 10V | 4V @ 270µA | 96nC @ 10V | ±20V | 4897pF @ 50V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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ON Semiconductor |
SUPERFET3 650V FRFET,110M |
20.244 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 740µA | 62nC @ 10V | ±30V | 2635pF @ 400V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N CH 950V 10A I2PAKFP |
7.596 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 10A (Tc) | 10V | 850mOhm @ 5A, 10V | 5V @ 100µA | 51nC @ 10V | ±30V | 1620pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAKFP (TO-281) | TO-262-3 Full Pack, I²Pak |
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Vishay Siliconix |
MOSFET N-CH TO-220AB |
12.006 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH TO-220 FULLPAK |
12.774 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MV POWER MOS |
8.676 |
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OptiMOS™ 5 | N-Channel | MOSFET (Metal Oxide) | 150V | 120A | 8V, 10V | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100nC @ 10V | ±20V | 7800pF @ 75V | - | 500mW (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 23.5A TO-3P |
6.108 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 23.5A (Tc) | 10V | 240mOhm @ 11.8A, 10V | 5V @ 250µA | 145nC @ 10V | ±30V | 5500pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET TO247-4 |
8.244 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
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IXYS |
200V/90A ULTRA JUNCTION X3-CLASS |
7.002 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 12.8mOhm @ 45A, 10V | 4.5V @ 1.5mA | 78nC @ 10V | ±20V | 5420pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH D2PAK TO-263 |
22.548 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 35A TO-3PN |
9.720 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 98mOhm @ 17.5A, 10V | 5V @ 250µA | 181nC @ 10V | ±30V | 6640pF @ 25V | - | 312.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 600V 23A TO220 |
8.592 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2090pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
200V/72A ULTRA JUNCTION X3-CLASS |
8.352 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 20mOhm @ 36A, 10V | 4.5V @ 1.5mA | 55nC @ 10V | ±20V | 3780pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 52A TO247 |
10.740 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 72mOhm @ 26A, 10V | 3.5V @ 250µA | 125nC @ 10V | ±20V | 5890pF @ 380V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 38A TO220 |
18.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 38A (Tc) | 10V | 99mOhm @ 11.3A, 10V | 4V @ 250µA | 62nC @ 10V | ±30V | 2587pF @ 100V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 37A TO247 |
13.374 |
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Automotive, AEC-Q101, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 104mOhm @ 18.5A, 10V | 5V @ 250µA | 139nC @ 10V | ±20V | 4302pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 14A TO-247 |
9.996 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 299mOhm @ 7A, 10V | 5V @ 250µA | 40nC @ 10V | ±25V | 1250pF @ 50V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 17A TO-247 |
6.888 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 220mOhm @ 8.5A, 10V | 5V @ 250µA | 60nC @ 10V | ±25V | 1800pF @ 50V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 80V 160A TO-3P |
8.124 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 160A (Tc) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 290nC @ 10V | ±25V | 7900pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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IXYS |
300V/56A ULTRA JUNCTION X3-CLASS |
6.324 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56nC @ 10V | ±20V | 3.75nF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
HIGH POWER_NEW |
8.748 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 10V | 90mOhm @ 11.4A, 10V | 4.5V @ 570µA | 51nC @ 10V | ±20V | 2103pF @ 400V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 52A |
9.036 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 70mOhm @ 26A, 10V | 3.5V @ 250µA | 166nC @ 10V | ±20V | 4925pF @ 380V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AC |
13.740 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 17A TO-220FP |
15.354 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 220mOhm @ 8.5A, 10V | 5V @ 250µA | 60nC @ 10V | ±25V | 1800pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 23A TO-247 |
7.308 |
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FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 150mOhm @ 11.5A, 10V | 5V @ 250µA | 62.5nC @ 10V | ±25V | 2090pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 55V 120A TO-220 |
20.652 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 120A (Tc) | 10V | 3.8mOhm @ 60A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 6800pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
SUPERFET3 650V TO247 |
7.308 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 46A (Tc) | 10V | 65mOhm @ 23A, 10V | 5V @ 4.6mA | 98nC @ 10V | ±30V | 4075pF @ 400V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
300V/72A ULTRA JUNCTION X3-CLASS |
6.660 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 72A (Tc) | 10V | 19mOhm @ 36A, 10V | 4.5V @ 1.5mA | 82nC @ 10V | ±20V | 5.4nF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH TO-247AC |
14.640 |
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EF | N-Channel | MOSFET (Metal Oxide) | 600V | 32A (Tc) | 10V | 97mOhm @ 17A, 10V | 4V @ 250µA | 134nC @ 10V | ±30V | 2568pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET E SERIES 600V D2PAK (TO-2 |
14.004 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 40A (Tc) | 10V | 65mOhm @ 16A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 2700pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |