Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 154/999
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
MOSFET NCH 150V 106A TO220 |
17.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 18.5A (Ta), 106A (Tc) | 10V | 11mOhm @ 20A, 10V | 5.1V @ 250µA | 60nC @ 10V | ±20V | 3010pF @ 75V | - | 8.3W (Ta), 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 9A ITO220 |
18.288 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Tc) | 10V | 1.4Ohm @ 4.5A, 10V | 4V @ 250µA | 72nC @ 10V | ±30V | 2470pF @ 25V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220AB |
21.684 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO220AB |
8.148 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2.5V @ 250µA | 230nC @ 10V | ±20V | 11155pF @ 30V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 900V 7A ITO220 |
18.612 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1969pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Nexperia |
MOSFET N-CH 40V 120A I2PAK |
40.578 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.8mOhm @ 25A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 11340pF @ 25V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 195A |
20.478 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137nC @ 4.5V | ±20V | 8320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
17.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4V, 5V | 28mOhm @ 31A, 5V | 2V @ 250µA | 66nC @ 5V | ±10V | 3300pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 22A D2PAK |
19.440 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 139mOhm @ 11A, 10V | 5V @ 250µA | 64nC @ 10V | ±25V | 2880pF @ 100V | - | 140W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO220 FULLP |
21.348 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 13.8A TO247 |
6.864 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Nexperia |
MOSFET N-CH 60V 120A I2PAK |
45.990 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 4V @ 1mA | 137nC @ 10V | ±20V | 9997pF @ 30V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK |
17.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 16A TO-220AB |
12.642 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 230mOhm @ 8A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 55V 60A TO-220FP |
12.756 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 55V | 60A (Tc) | 10V | 6.5mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 4400pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
8.172 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | 8410pF @ 50V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 600V 16A TO-220 |
20.424 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 260mOhm @ 8A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 2250pF @ 25V | - | 167W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 100V 80A TO-220 |
38.190 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 23mOhm @ 40A, 10V | 4V @ 250µA | 104nC @ 10V | ±20V | 4270pF @ 25V | - | 300W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
NCHANNEL 600 V 105 MOHM TYP. 22 |
12.210 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 250V 19A TO-220FP |
21.936 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 19A (Tc) | 10V | 46mOhm @ 11A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4480pF @ 25V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 500V 9A TO-220FM |
13.548 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 840mOhm @ 4.5A, 10V | 4V @ 1mA | 18nC @ 10V | ±30V | 630pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 10A TO-220FM |
15.540 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | - | - | - | ±30V | - | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO247AC |
8.112 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78nC @ 10V | ±30V | 1350pF @ 100V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 200V 70A TO220 |
9.396 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 70A (Tc) | 10V | 42.7mOhm @ 35A, 10V | 5V @ 1mA | 125nC @ 10V | ±30V | 6900pF @ 25V | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 650V 24A TO220FP |
20.784 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 140mOhm @ 12A, 10V | 4V @ 250µA | 41.5nC @ 10V | ±25V | 1790pF @ 100V | - | 34W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-220AB |
16.962 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 450mOhm @ 8.4A, 10V | 4V @ 250µA | 81nC @ 10V | ±30V | 1910pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 1050V 4A TO-247 |
16.812 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 1050V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 5V @ 100µA | 17nC @ 10V | ±30V | 380pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 22A I2PAK |
13.794 |
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MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 150mOhm @ 11A, 10V | 4V @ 250µA | 36nC @ 10V | ±25V | 1440pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 800V 5.4A TO-247AC |
7.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.4A (Tc) | 10V | 2Ohm @ 3.2A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 100V 38A TO-220FP |
16.506 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 100V | 38A (Tc) | 10V | 15mOhm @ 40A, 10V | 4V @ 250µA | 189nC @ 10V | ±20V | 4300pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |