Transistoren

Transistoren - Bipolar (BJT) - Arrays (1.432)
Transistoren - Bipolar (BJT) - Arrays, vorgespannt (1.584)
Transistoren - Bipolar (BJT) - RF (1.506)
Transistoren - Bipolar (BJT) - Single (13.715)
Transistoren - Bipolar (BJT) - Einfach, vorgespannt (3.282)
Transistoren - FETs, MOSFETs - Arrays (3.829)
Transistoren - FETs, MOSFETs - RF (3.043)
Transistoren - FETs, MOSFETs - Single (29.970)
Transistoren - IGBTs - Arrays (18)
Transistoren - IGBTs - Module (2.367)
Transistoren - IGBTs - Single (3.305)
Transistoren - JFETs (664)
Transistoren - Programmierbare Unijunction (26)
Transistoren - Spezialzweck (162)

Datensätze 64.903

Seite 722/2164

Teilenummer	Beschreibung	Auf Lager
ALD114904APAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs (th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager5.076
ALD114904ASAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs (th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager7.434
ALD114904PAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs (th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager7.434
ALD114904SAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 3.6V Vgs (th) (Max) @ Id: 360mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager6.540
ALD114913PAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V Vgs (th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager2.952
ALD114913SAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 500Ohm @ 2.7V Vgs (th) (Max) @ Id: 1.26V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager6.288
ALD114935PAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540Ohm @ 0V Vgs (th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager2.088
ALD114935SAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD® FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Depletion Mode Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 12mA, 3mA Rds On (Max) @ Id, Vgs: 540Ohm @ 0V Vgs (th) (Max) @ Id: 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 2.5pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager6.804
ALD210800APCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs (th) (Max) @ Id: 10mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 15pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager5.490
ALD210800ASCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs (th) (Max) @ Id: 10mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 15pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager8.892
ALD210800PCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 15pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager8.838
ALD210800SCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 25Ohm Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 15pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager5.436
ALD210802PCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager3.636
ALD210802SCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager8.514
ALD210804PCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager5.076
ALD210804SCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager6.516
ALD210808APCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager7.164
ALD210808ASCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager7.362
ALD210808PCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager8.514
ALD210808SCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager3.402
ALD210814PCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: - Betriebstemperatur: - Montagetyp: Through Hole Paket / Fall: 16-DIP (0.300", 7.62mm) Lieferantengerätepaket: 16-PDIP	Auf Lager6.102
ALD210814SCL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 4N-CH 10.6V 0.08A 16SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 4 N-Channel, Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: - Montagetyp: Surface Mount Paket / Fall: 16-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 16-SOIC	Auf Lager2.664
ALD212900APAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs (th) (Max) @ Id: 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 30pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager5.490
ALD212900ASAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs (th) (Max) @ Id: 10mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 30pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager3.456
ALD212900PAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs (th) (Max) @ Id: 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 30pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager5.688
ALD212900SAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: 14Ohm Vgs (th) (Max) @ Id: 20mV @ 20µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: 30pF @ 5V Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager6.336
ALD212902PAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager3.798
ALD212902SAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager7.524
ALD212904PAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8DIP Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Through Hole Paket / Fall: 8-DIP (0.300", 7.62mm) Lieferantengerätepaket: 8-PDIP	Auf Lager3.222
ALD212904SAL Advanced Linear Devices Inc.	Transistoren - FETs, MOSFETs - Arrays MOSFET 2N-CH 10.6V 0.08A 8SOIC Hersteller: Advanced Linear Devices Inc. Serie: EPAD®, Zero Threshold™ FET-Typ: 2 N-Channel (Dual) Matched Pair FET-Funktion: Logic Level Gate Drain to Source Voltage (Vdss): 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.: 80mA Rds On (Max) @ Id, Vgs: - Vgs (th) (Max) @ Id: 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs: - Eingangskapazität (Ciss) (Max) @ Vds: - Leistung - max: 500mW Betriebstemperatur: 0°C ~ 70°C (TJ) Montagetyp: Surface Mount Paket / Fall: 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket: 8-SOIC	Auf Lager3.474

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