Rohm Semiconductor Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerRohm Semiconductor
Datensätze 774
Seite 19/26
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 500MA TUMD2 |
2.178 |
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- | Schottky | 40V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 125pF @ 0V, 1MHz | Surface Mount | 2-SMD, Flat Lead | TUMD2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 60V 2A PMDS |
7.380 |
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- | Schottky | 60V | 2A | 650mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDTM |
8.856 |
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Automotive, AEC-Q101 | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
AUTOMOTIVE SCHOTTKY BARRIER DIOD |
2.394 |
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Automotive, AEC-Q101 | Schottky | 100V | 5A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 3µA @ 100V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 40V 2A PMDU |
3.042 |
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- | Schottky | 40V | 2A | 560mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
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Rohm Semiconductor |
AUTOMOTIVE FAST RECOVERY DIODE ( |
3.312 |
|
Automotive, AEC-Q101 | Standard | 200V | 3A | 920mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Rohm Semiconductor |
SUPER FAST RECOVERY DIODE (CORRE |
7.794 |
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Automotive, AEC-Q101 | Standard | 350V | 10A | 1.5V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 350V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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|
Rohm Semiconductor |
FAST RECOVERY DIODES (CORRESPOND |
2.394 |
|
Automotive, AEC-Q101 | Standard | 430V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 430V | 150pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
|
|
Rohm Semiconductor |
FAST RECOVERY DIODES (CORRESPOND |
5.058 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 2.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | 157pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
23.244 |
|
- | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 8A TO220ACFP |
16.296 |
|
- | Standard | 600V | 8A | 3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) |
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|
Rohm Semiconductor |
FAST RECOVERY DIODES (CORRESPOND |
5.076 |
|
Automotive, AEC-Q101 | Standard | 350V | 20A | 1.35V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 350V | 412pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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|
Rohm Semiconductor |
FAST RECOVERY DIODES (CORRESPOND |
2.700 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | 322pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
17.280 |
|
- | Standard | 600V | 8A | 2.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A CPD |
5.921 |
|
- | Standard | 600V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPD | 150°C (Max) |
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Rohm Semiconductor |
FAST RECOVERY DIODES (CORRESPOND |
3.870 |
|
Automotive, AEC-Q101 | Standard | 600V | 10A | 1.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | 169pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 8A TO220ACFP |
20.316 |
|
- | Standard | 600V | 8A | 2.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220ACFP | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A LPDS |
2.100 |
|
- | Standard | 600V | 10A | 2.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
FAST RECOVERY DIODES (CORRESPOND |
7.380 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 315pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
18.396 |
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- | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220NFM | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 600V 20A LPDS |
2.556 |
|
- | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
RBQ30NS45BFH IS THE HIGH RELIABI |
8.478 |
|
Automotive, AEC-Q101 | Schottky | 45V | 30A | 590mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
5.922 |
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- | Silicon Carbide Schottky | 650V | 2.15A (DC) | 1.5V @ 2.15A | No Recovery Time > 500mA (Io) | 0ns | 10.8µA @ 650V | 110pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
2.556 |
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- | Silicon Carbide Schottky | 650V | 4A (DC) | 1.5V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 650V | 200pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
5.166 |
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- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
DIODES SILICON CARBIDE |
8.406 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO263AB |
10.539 |
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Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A (DC) | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Rohm Semiconductor |
RB511SM-30FH IS THE HIGH RELIABI |
4.158 |
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Automotive, AEC-Q101 | Schottky | 30V | 100mA | 370mV @ 10mA | Small Signal =< 200mA (Io), Any Speed | - | 7µA @ 10V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 125°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 20V 500MA EMD2 |
7.632 |
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- | Schottky | 20V | 500mA | 530mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 20V | - | Surface Mount | SC-79, SOD-523 | EMD2 | 150°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 400V 1A PMDTM |
7.650 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |