DMT6018LDR-7
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Nur als Referenz
Teilenummer | DMT6018LDR-7 | ||||||||||||||||||
PNEDA Teilenummer | DMT6018LDR-7 | ||||||||||||||||||
Beschreibung | MOSFET BVDSS: 41V 60V V-DFN3030- | ||||||||||||||||||
Hersteller | Diodes Incorporated | ||||||||||||||||||
Stückpreis |
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Auf Lager | 202 | ||||||||||||||||||
Lager | Shipped from Hong Kong SAR | ||||||||||||||||||
Voraussichtliche Lieferung | Feb 22 - Feb 27 (Wählen Sie Expressed Shipping) | ||||||||||||||||||
Guarantee | Bis zu 1 Jahr [PNEDA-Garantie] * | ||||||||||||||||||
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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DMT6018LDR-7 Ressourcen
Marke | Diodes Incorporated |
ECAD Module |
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Mfr. Artikelnummer | DMT6018LDR-7 |
Kategorie | Halbleiter › Transistoren › Transistoren - FETs, MOSFETs - Arrays |
Payment Method
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Notes
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DMT6018LDR-7 Technische Daten
Hersteller | Diodes Incorporated |
Serie | - |
FET-Typ | 2 N-Channel (Dual) |
FET-Funktion | Standard |
Drain to Source Voltage (Vdss) | 60V |
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | 8.8A (Ta) |
Rds On (Max) @ Id, Vgs | 17mOhm @ 8.2A, 10V |
Vgs (th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 13.9nC @ 10V |
Eingangskapazität (Ciss) (Max) @ Vds | 869pF @ 30V |
Leistung - max | 1.9W |
Betriebstemperatur | -55°C ~ 150°C (TJ) |
Montagetyp | Surface Mount |
Paket / Fall | 8-PowerVDFN |
Lieferantengerätepaket | V-DFN3030-8 |
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Hersteller Nexperia USA Inc. Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 15.4A Rds On (Max) @ Id, Vgs 45mOhm @ 5A, 10V Vgs (th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 535pF @ 25V Leistung - max 32W Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Paket / Fall SOT-1205, 8-LFPAK56 Lieferantengerätepaket LFPAK56D |
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