Microsemi Transistoren - Bipolar (BJT) - RF
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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - RF
HerstellerMicrosemi Corporation
Datensätze 395
Seite 14/14
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Serie | Transistortyp | Spannung - Kollektor-Emitter-Durchschlag (max.) | Frequenz - Übergang | Rauschzahl (dB Typ @ f) | Gewinn | Leistung - max | Gleichstromverstärkung (hFE) (min) @ Ic, Vce | Strom - Kollektor (Ic) (max.) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi |
RF POWER TRANSISTOR |
2.556 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
RF POWER TRANSISTOR |
8.388 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
RF TRANS 65V 1.09GHZ 55KV |
5.274 |
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- | - | 65V | 1.09GHz | - | 6dB | 2900W | 10 @ 1A, 5V | 80A | 200°C | Chassis Mount | 55KV | 55KV |
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Microsemi |
RF TRANS 30V 400MHZ 55FT |
4.608 |
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- | - | 30V | 225MHz ~ 400MHz | - | 13dB | 11W | 10 @ 100A, 5V | 700mA | 150°C | Stud Mount | 55FT | 55FT |
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Microsemi |
RF TRANS NPN 15V UB |
6.408 |
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Military, MIL-PRF-19500/343 | NPN | 15V | - | 4.5dB @ 450MHz | 21dB | 200mW | 30 @ 3mA, 1V | 40mA | -65°C ~ 200°C (TJ) | Surface Mount | 3-SMD, No Lead | UB |