Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 10/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 600V 20.7A TO-220 |
8.838 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO220FP |
53.322 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
28.362 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET NCH 40V 523A D2PAK |
22.152 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 523A (Tc) | 10V | 0.69mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 13975pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 650V 20.7A TO-247 |
51.366 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.7A (Tc) | 10V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114nC @ 10V | ±20V | 2400pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 209A TO247AC |
26.874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 209A (Tc) | 10V | 4.5mOhm @ 125A, 10V | 4V @ 250µA | 620nC @ 10V | ±20V | 13000pF @ 25V | - | 470W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 94A TO-247AC |
19.368 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 94A (Tc) | 10V | 23mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 6040pF @ 25V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220-FP |
108.408 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220 |
17.994 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | 2660pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 195A TO-247AC |
30.060 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 195A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540nC @ 10V | ±20V | 19860pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 93A TO-247AC |
25.824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 93A (Tc) | 10V | 17.5mOhm @ 56A, 10V | 5V @ 250µA | 270nC @ 10V | ±20V | 10880pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3 |
18.552 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 11mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 171A TO-247AC |
56.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227nC @ 10V | ±30V | 10470pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 64A TO220-3 |
9.084 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 130A TO-247AC |
668.178 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 241nC @ 10V | ±30V | 10720pF @ 50V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
7.752 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 70mOhm @ 15.1A, 10V | 4.5V @ 760µA | 67nC @ 10V | ±20V | 2721pF @ 400V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 200V 88A TO220-3 |
14.808 |
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OptimWatt™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87nC @ 10V | ±20V | 7100pF @ 100V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 53A TO247 |
12.954 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 53A (Tc) | 10V | 70mOhm @ 25.8A, 10V | 3.5V @ 1.72mA | 170nC @ 10V | ±20V | 3800pF @ 100V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 76A TO247-3 |
14.064 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121nC @ 10V | ±20V | 5243pF @ 400V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 50A TO247-3 |
7.656 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 10V | 40mOhm @ 24.9A, 10V | 4V @ 1.24mA | 107nC @ 10V | ±20V | 4340pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 700V 43.3A TO247 |
23.184 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.76mA | 161nC @ 10V | ±20V | 4440pF @ 100V | - | 391W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 650V 68.5A PG-TO247 |
12.330 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300nC @ 10V | ±20V | 8400pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 47A TO-247 |
17.922 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 320nC @ 10V | ±20V | 6800pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 800V 54.9A TO-247 |
8.760 |
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CoolMOS™ C3 | N-Channel | MOSFET (Metal Oxide) | 800V | 54.9A (Tc) | 10V | 85mOhm @ 32.6A, 10V | 3.9V @ 3.3mA | 288nC @ 10V | ±20V | 7520pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23 |
317.016 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT23 |
229.476 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | 1.4V @ 26µA | 1.4nC @ 10V | ±20V | 41pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 0.3A SOT23 |
169.362 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4.5V, 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6nC @ 10V | ±20V | 20pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23 |
201.918 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 1.8V @ 13µA | 0.9nC @ 10V | ±20V | 20.9pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 60V 150MA SOT-323 |
1.030.020 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 8Ohm @ 150mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19.1pF @ 25V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET P-CH 20V 0.63A SOT-323 |
660.582 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 630mA (Tc) | 2.5V, 4.5V | 550mOhm @ 630mA, 4.5V | 1.2V @ 3.5µA | 1.3nC @ 4.5V | ±12V | 115pF @ 15V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |