Infineon Technologies Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerInfineon Technologies
Datensätze 720
Seite 19/24
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO263-2 |
2.628 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 330µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO263-2 |
8.478 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.8V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 100pF @ 1V, 1MHz | Surface Mount | TO-262 | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO263-2 |
6.678 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 670µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO263-2 |
2.214 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 830µA @ 650V | 160pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO263-2 |
7.380 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO263-2 |
5.022 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO263-2 |
3.024 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.8V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 1.6mA @ 650V | 270pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2 |
2.070 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 1.7mA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO263-2 |
126 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.8V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 2.1mA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 2A VSON-4 |
5.220 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A VSON-4 |
2.718 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 130pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A VSON-4 |
8.676 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 110µA @ 650V | 190pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A VSON-4 |
7.578 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 250pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4 |
2.034 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4 |
3.474 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 200A DIE |
7.542 |
|
- | Standard | 1200V | 200A | 2.7V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 360ns | 3.6µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.686 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.230 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 25A DIE |
4.554 |
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- | Standard | 1200V | 25A | 2.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 700nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.664 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
5.688 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
8.874 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
8.568 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.520 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
5.832 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.866 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.590 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.398 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.344 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.358 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |