Infineon Technologies Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerInfineon Technologies
Datensätze 720
Seite 18/24
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 5A TO247HC |
3.762 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A TO247 |
8.388 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 375pF @ 1V, 1MHz | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2 |
7.020 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 340µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 5A TO220-2 |
4.374 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 170µA @ 650V | 160pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 8A TO220-2 |
3.600 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 280µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247-3 |
5.112 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3 |
5.058 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 1.4mA @ 650V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2 |
4.788 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
4.122 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO220-2 |
6.678 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 100pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 6A TO220-2 |
3.222 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 4A TO220-2 |
5.670 |
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CoolSiC™+ | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3 |
6.192 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 500µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
5.724 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8.892 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 700µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2 |
5.796 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 310µA @ 650V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2 |
4.752 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 550µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 80V 200MA SCD80-2 |
6.102 |
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- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SCD80-2 |
3.312 |
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- | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5.6A TO252-3 |
2.808 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5.6A | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GP 80V 250MA SOT23-3 |
8.964 |
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Automotive, AEC-Q101 | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GP 200V 250MA SOT23-3 |
3.600 |
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Automotive, AEC-Q101 | Standard | 200V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SHOCTTKY |
6.858 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SHOCTTKY |
3.582 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SHOCTTKY |
4.050 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SHOCTTKY |
3.870 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SHOCTTKY |
4.086 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SHOCTTKY |
7.092 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE SCHOTTKY 650V 2A TO220-2 |
6.408 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 2A (DC) | 1.7V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 35µA @ 650V | 70pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO220-2 |
4.932 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |