Honeywell Aerospace Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerHoneywell Aerospace
Datensätze 4
Seite 1/1
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Honeywell Aerospace |
MOSFET N-CH 55V 4-PIN |
2.214 |
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HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 4-Power Tab | 4-SIP |
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Honeywell Aerospace |
MOSFET N-CH 55V 8-DIP |
2.988 |
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HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad |
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Honeywell Aerospace |
MOSFET N-CH 55V 8-DIP |
4.824 |
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HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | - | Through Hole | - | 8-CDIP Exposed Pad |
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Honeywell Aerospace |
MOSFET N-CH 55V 4-PIN |
8.946 |
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HTMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | - | 5V | 400mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | - | 50W (Tj) | - | Through Hole | - | - |