Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 22/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 250V 2A PW-MOLD |
8.262 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 2A (Ta) | 10V | 2.55Ohm @ 1A, 10V | 3.5V @ 1mA | 24nC @ 10V | ±20V | 381pF @ 10V | - | 20W (Ta) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 5A PW-MOLD |
8.892 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15nC @ 10V | ±20V | 700pF @ 10V | - | 20W (Ta) | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 1000V 4A TO-220AB |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Ta) | 10V | 3.8Ohm @ 2A, 10V | 3.5V @ 1mA | 60nC @ 10V | ±20V | 700pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 25A TO220NIS |
2.376 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 25A (Ta) | 4V, 10V | 46mOhm @ 12A, 10V | 2V @ 1mA | 25nC @ 10V | ±20V | 900pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO-220AB |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | 30nC @ 10V | ±30V | 1300pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 45A TO-3PN |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 45A (Ta) | 10V | 20mOhm @ 25A, 10V | 3.5V @ 1mA | 68nC @ 10V | ±20V | 2300pF @ 10V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 1A DP |
5.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1A (Ta) | 10V | 9Ohm @ 500mA, 10V | 4V @ 1mA | 15nC @ 10V | ±30V | 350pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO-220AB |
7.218 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2040pF @ 10V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 800V 3A TO220SM |
8.010 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Ta) | 10V | 3.6Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 750pF @ 25V | - | 75W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220NIS |
6.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 620mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2040pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD |
3.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4.5A (Ta) | 10V | 1Ohm @ 2.5A, 10V | 3.5V @ 1mA | 10nC @ 10V | ±20V | 440pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A SC-97 |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100nC @ 10V | ±20V | 4000pF @ 10V | - | 125W (Tc) | 150°C (TJ) | Surface Mount | 4-TFP (9.2x9.2) | SC-97 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 13A TO220FL |
3.996 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 13A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 34nC @ 10V | ±30V | 1600pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 3A PW-MOLD |
6.354 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 3A (Ta) | 10V | 1.7Ohm @ 1.5A, 10V | 3.5V @ 1mA | 12nC @ 10V | ±20V | 267pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A SC-97 |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5Ohm @ 5A, 10V | 4V @ 1mA | 17nC @ 10V | ±30V | 780pF @ 10V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | 4-TFP (9.2x9.2) | SC-97 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 35A TO220NIS |
4.356 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 60V | 35A (Ta) | 4V, 10V | 12.5mOhm @ 18A, 10V | 2.5V @ 1mA | 91nC @ 10V | ±20V | 5120pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220NIS |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 10V | 5.8mOhm @ 23A, 10V | 4V @ 1mA | 196nC @ 10V | ±20V | 12400pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220NIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS |
3.456 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.7Ohm @ 2.5A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 550pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN |
8.064 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 330mOhm @ 10A, 10V | 4V @ 1mA | 60nC @ 10V | ±30V | 4250pF @ 25V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS |
6.012 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 500mOhm @ 6.5A, 10V | 4V @ 1mA | 62nC @ 10V | ±30V | 3100pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD2 |
3.418 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 100mOhm @ 2.5A, 10V | 2.5V @ 1mA | 15nC @ 10V | ±20V | 730pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4.5A PW-MOLD2 |
2.178 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4.5A (Ta) | 10V | 1Ohm @ 2.5A, 10V | 3.5V @ 1mA | 10nC @ 10V | ±20V | 440pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Through Hole | PW-MOLD2 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8-SOIC |
4.572 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 6.6mOhm @ 6.5A, 10V | 2.5V @ 1mA | 42nC @ 10V | ±20V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOIC |
3.204 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.5mOhm @ 9A, 10V | 2.3V @ 1mA | 49nC @ 10V | ±20V | 4600pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 8SOIC ADV |
3.708 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 1mA | 49nC @ 10V | ±20V | 2200pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 38A 8SOIC ADV |
8.586 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Ta) | 4.5V, 10V | 4.2mOhm @ 19A, 10V | 2.3V @ 500µA | 50nC @ 10V | ±20V | 4600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 34A 8SOP ADV |
3.454 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 5.3mOhm @ 17A, 10V | 2.3V @ 1mA | 36nC @ 10V | ±20V | 3430pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 44A 8SOP ADV |
3.114 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 44A (Ta) | 4.5V, 10V | 3.2mOhm @ 22A, 10V | 2.3V @ 1mA | 59nC @ 10V | ±20V | 5700pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 2.2A PS-8 |
6.174 |
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U-MOSIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 2.2A (Ta) | 4.5V, 10V | 180mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5nC @ 10V | ±20V | 360pF @ 10V | - | 840mW (Ta) | 150°C (TJ) | Surface Mount | PS-8 (2.9x2.4) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A 8-SOP |
5.382 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 3.4mOhm @ 9A, 10V | 2.5V @ 1mA | 56nC @ 10V | ±20V | 2900pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |