Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 24/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A 3DP 2-7K1A |
3.258 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 40A 3DP 2-7K1A |
5.832 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Ta) | 4.5V, 10V | 11mOhm @ 20A, 10V | 2.3V @ 200µA | 29nC @ 10V | ±20V | 1920pF @ 10V | - | 47W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A TO220SIS |
2.016 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 20A 8SOP |
2.880 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta) | 4.5V, 10V | 11.3mOhm @ 10A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 2110pF @ 10V | - | 1.6W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 16A TO-220SIS |
8.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 16A | - | 270mOhm @ 8A, 10V | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 16A TO-220SIS |
5.778 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Ta) | - | 330mOhm @ 8A, 10V | 4V @ 1mA | 45nC @ 10V | - | 2600pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO-220SIS |
6.282 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 100mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | ±20V | 2550pF @ 100V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 40A DPAK-3 |
4.842 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5nC @ 10V | ±20V | 1150pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A DPAK-3 |
5.940 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Ta) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 3110pF @ 10V | - | 93W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A DPAK-3 |
4.734 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 9.7mOhm @ 22.5A, 10V | 2.3V @ 200µA | 25nC @ 10V | ±20V | 1500pF @ 10V | - | - | - | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A TO-220SIS |
7.974 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 4A TO-220SIS |
5.760 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS |
8.370 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS |
5.706 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS |
5.850 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS |
7.272 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 1.9Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3 |
6.210 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3 |
3.960 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3 |
3.114 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3 |
5.256 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3 |
8.028 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
3.258 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | - | 8.5mOhm @ 25A, 10V | - | 54nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
3.348 |
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U-MOSIV | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB |
3.924 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 50A (Tc) | - | 12mOhm @ 25A, 10V | - | 55nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB |
6.534 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6 |
8.208 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | ±20V | 300pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6 |
8.154 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | ±20V | 290pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6 |
3.240 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 59mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | ±20V | 830pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6 |
2.052 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 14nC @ 10V | ±20V | 640pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6 |
6.786 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | ±12V | 630pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |