Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 20/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 160mOhm @ 2.5A, 10V | 2V @ 1mA | 12nC @ 10V | ±20V | 370pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 3A TO-3PN |
6.156 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3A (Ta) | 10V | 4.3Ohm @ 1.5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 750pF @ 25V | - | 125W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 8A TO-3PN |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 8A (Ta) | 10V | 1.4Ohm @ 4A, 10V | 4V @ 1mA | 58nC @ 10V | ±30V | 2040pF @ 25V | - | 85W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 14A TO-3PN |
3.348 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Ta) | 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 58nC @ 10V | ±30V | 2600pF @ 10V | - | 80W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 18A TO-3PN |
3.672 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 18A (Ta) | 10V | 270mOhm @ 10A, 10V | 4V @ 1mA | 80nC @ 10V | ±30V | 3720pF @ 10V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN |
7.344 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | ±20V | 5400pF @ 10V | - | 150W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 20A TO220SM |
6.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100nC @ 10V | ±20V | 4000pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 30A TO-3PN |
2.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | ±20V | 5400pF @ 10V | - | 90W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N)IS | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220SM |
6.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2040pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A TO220SM |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 66nC @ 10V | ±20V | 2300pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 50A TO-3P(L) |
6.174 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 50A (Ta) | 10V | 95mOhm @ 25A, 10V | 3.4V @ 1mA | 280nC @ 10V | ±30V | 11000pF @ 10V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 5A TO-220SIS |
5.328 |
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π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 900V | 5A (Ta) | 10V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 1150pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS |
2.070 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 5A VS-6 |
8.604 |
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U-MOSIII-H | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | ±20V | 490pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220SM |
7.020 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 30mOhm @ 25A, 10V | 2V @ 1mA | 60nC @ 10V | ±20V | 1800pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220FL |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 17mOhm @ 25A, 10V | 2V @ 1mA | 110nC @ 10V | ±20V | 3350pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220FL |
8.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23nC @ 10V | ±30V | 920pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220SM |
4.806 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23nC @ 10V | ±30V | 920pF @ 10V | - | 65W (Tc) | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO220SIS |
4.302 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14nC @ 10V | ±30V | 720pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A TO-3PN |
7.704 |
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DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27nC @ 10V | ±30V | 1470pF @ 10V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A TO220W |
8.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 27A, 10V | 2.3V @ 1mA | 110nC @ 10V | ±20V | 5700pF @ 10V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO220W |
6.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 60A (Ta) | 4.5V, 10V | 7.8mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | ±20V | 5450pF @ 10V | - | 140W (Tc) | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A TO220W |
3.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Ta) | 4.5V, 10V | 6.4mOhm @ 35A, 10V | 2.3V @ 1mA | 87nC @ 10V | ±20V | 5450pF @ 10V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 3.9A VS6 2-3T1A |
8.640 |
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U-MOSIII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 3.9A (Ta) | 4.5V, 10V | 75mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4nC @ 10V | ±20V | 251pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A |
6.012 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 40mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | ±8V | 1430pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A |
3.474 |
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U-MOSIV | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2V, 4.5V | 55mOhm @ 2.2A, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | ±12V | 680pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 14mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39nC @ 10V | ±20V | 1860pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 4.6mOhm @ 9A, 10V | 2.3V @ 1mA | 38nC @ 10V | ±20V | 2265pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 17mOhm @ 5.5A, 10V | 2.3V @ 1mA | 11nC @ 10V | ±20V | 640pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B |
3.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 7.5A (Ta) | 4.5V, 10V | 27mOhm @ 3.8A, 10V | 2.3V @ 1mA | 11nC @ 10V | ±20V | 650pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |