Toshiba Semiconductor and Storage Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 225
Seite 8/8
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
5.400 |
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- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
5.256 |
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- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
7.614 |
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- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
2.034 |
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- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
5.994 |
|
- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
8.046 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
5.022 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
8.568 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
3.456 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
6.534 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
7.164 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
3.490 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
7.398 |
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- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 45V 100MA ESC |
7.038 |
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- | Schottky | 45V | 100mA | 600mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10V | 18pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | -40°C ~ 100°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2 |
2.826 |
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- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.3pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | SC2 | 125°C (Max) |