Toshiba Semiconductor and Storage Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 225
Seite 6/8
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A M-FLAT |
5.616 |
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- | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A M-FLAT |
7.902 |
|
- | Schottky | 40V | 1.5A | 490mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A M-FLAT |
7.992 |
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- | Schottky | 30V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A M-FLAT |
6.282 |
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- | Schottky | 40V | 2A | 520mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A M-FLAT |
3.276 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 2A MFLAT |
4.572 |
|
- | Schottky | 60V | 2A | 580mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
2.016 |
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- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
8.730 |
|
- | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A MFLAT |
4.599 |
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- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A M-FLAT |
6.102 |
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- | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 3A M-FLAT |
4.842 |
|
- | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | 102pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A MFLAT |
5.202 |
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- | Standard | 400V | 2A | 1.8V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A M-FLAT |
6.570 |
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- | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A M-FLAT |
5.598 |
|
- | Standard | 400V | 3A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 100MA SC70 |
8.838 |
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- | Standard | 200V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 60ns | 1µA @ 200V | 3pF @ 0V, 1MHz | Surface Mount | SC-70, SOT-323 | SC-70 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 6A TO220-2L |
3.492 |
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- | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 35pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 8A TO220-2L |
8.910 |
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- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 44pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 10A TO220-2L |
8.352 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 12A TO220-2L |
6.516 |
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- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 170V | 65pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
7.038 |
|
- | Schottky | 30V | 3A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
6.768 |
|
- | Schottky | 30V | 3A | 400mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A MFLAT |
6.804 |
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- | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 5A MFLAT |
5.508 |
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- | Schottky | 30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A MFLAT |
8.874 |
|
- | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A MFLAT |
7.344 |
|
- | Schottky | 40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A SFLAT |
7.902 |
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- | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
5.580 |
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- | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A SFLAT |
5.796 |
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- | Schottky | 40V | 1A | 510mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
2.484 |
|
- | Schottky | 30V | 1.5A | 360mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A SFLAT |
7.632 |
|
- | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | - | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |