Transistoren - FETs, MOSFETs - RF
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - RF
Datensätze 3.043
Seite 78/102
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Transistortyp | Frequenz | Gewinn | Spannungstest | Nennstrom (Ampere) | Rauschzahl | Stromtest | Leistung - Leistung | Spannung - Nennspannung | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
FET RF 65V 1.99GHZ H-36260-2 |
5.976 |
|
- | LDMOS | 1.99GHz | 15.9dB | 30V | - | - | 1.8A | 50W | 65V | 2-Flatpack, Fin Leads | H-36260-2 |
|
|
|
Infineon Technologies |
IC RF POWER TRANSISTOR |
8.388 |
|
- | LDMOS | 2.14GHz | 15.8dB | 30V | - | - | 1.6A | 50W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37260-2 |
|
|
|
Infineon Technologies |
IC RF POWER TRANSISTOR |
7.200 |
|
- | LDMOS | 2.14GHz | 15.8dB | 30V | - | - | 1.6A | 50W | 65V | 2-Flatpack, Fin Leads, Flanged | H-37260-2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34288 |
6.804 |
|
- | LDMOS | 821MHz | 19.3dB | 28V | - | - | 2.15A | 60W | 65V | 2-Flatpack, Fin Leads, Flanged | H-34288-4/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34288 |
2.178 |
|
- | LDMOS | 821MHz | 19.3dB | 28V | - | - | 2.15A | 60W | 65V | 2-Flatpack, Fin Leads, Flanged | H-34288-4/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34288 |
7.560 |
|
- | LDMOS | 821MHz | 19.3dB | 28V | - | - | 2.15A | 60W | 65V | 2-Flatpack, Fin Leads, Flanged | H-34288-4/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-362620-2 |
5.904 |
|
- | LDMOS | 960MHz | 19dB | 28V | - | - | 2.8A | 112W | 65V | H-36260-2 | H-36260-2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34288G-4/2 |
3.654 |
|
- | LDMOS | 1.99GHz | 19dB | 28V | - | - | 1.35A | 60W | 65V | H-34288G-4/2 | H-34288G-4/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34288G-4/2 |
5.652 |
|
- | LDMOS | 1.99GHz | 19dB | 28V | - | - | 1.35A | 60W | 65V | H-34288G-4/2 | H-34288G-4/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34275G-6/2 |
8.046 |
|
- | LDMOS (Dual), Common Source | 1.99GHz | 19dB | 30V | - | - | 2.65A | 80W | 65V | H-34275G-6/2 | H-34275G-6/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS H-34275G-6/2 |
6.354 |
|
- | LDMOS (Dual), Common Source | 1.99GHz | 19dB | 30V | - | - | 2.65A | 80W | 65V | H-34275G-6/2 | H-34275G-6/2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS |
6.174 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC FET RF LDMOS |
8.478 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC FET RF LDMOS |
5.274 |
|
* | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
FET RF 2CH 65V 2.61GHZ |
4.338 |
|
- | LDMOS (Dual), Common Source | 2.61GHz | 13.5dB | 28V | - | - | 230mA | 28W | 65V | H-37248-4 | H-37248-4 |
|
|
|
Infineon Technologies |
FET RF 2CH 65V 2.61GHZ |
8.154 |
|
- | LDMOS (Dual), Common Source | 2.61GHz | 13.5dB | 28V | - | - | 230mA | 28W | 65V | H-37248-4 | H-37248-4 |
|
|
|
Infineon Technologies |
FET RF 2CH 65V 2.61GHZ |
4.482 |
|
- | LDMOS (Dual), Common Source | 2.61GHz | 13.5dB | 28V | - | - | 230mA | 28W | 65V | H-37248-4 | H-37248-4 |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 150W GAN |
3.636 |
|
- | HEMT | 1.2GHz ~ 1.4GHz | 18dB | 50V | 5.5A | - | 600mA | 170W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 10W GAN |
7.668 |
|
- | HEMT | 3.5GHz | 17dB | 50V | 500mA | - | 30mA | 10W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 14W GAN |
8.802 |
|
- | HEMT | 2.5GHz | 15.2dB | 50V | 800mA | - | 15mA | 14W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 25W GAN |
4.752 |
|
- | HEMT | 2.5GHz | 12dB | 28V | 3A | - | 100mA | 25W | 32V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 650W GAN |
3.654 |
|
- | HEMT | 960MHz ~ 1.215GHz | 20.5dB | 50V | 33A | - | 500mA | 650W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 600W GAN |
5.112 |
|
- | HEMT | 1.03GHz ~ 1.09GHz | 21.4dB | 50V | 80A | - | 600mA | 550W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 700W GAN |
8.838 |
|
- | HEMT | 1.03GHz ~ 1.09GHz | 20.5dB | 50V | 31A | - | 500mA | 700W | 65V | - | - |
|
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|
M/A-Com Technology Solutions |
TRANSISTOR RF 700W GAN |
4.032 |
|
- | HEMT | 1.03GHz ~ 1.09GHz | 20.5dB | 50V | 31A | - | 500mA | 700W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 180W GAN |
5.706 |
|
- | HEMT | 2.7GHz ~ 3.1GHz | 11.8dB | 50V | 10A | - | 500mA | 215W | 65V | - | - |
|
|
|
M/A-Com Technology Solutions |
TRANSISTOR RF 85W GAN |
4.896 |
|
- | - | 2.7GHz ~ 3.5GHz | 25dB | 50V | 4.2A | - | 200mA | 85W | 53V | - | - |
|
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|
M/A-Com Technology Solutions |
TRANSISTOR RF 350W GAN |
5.022 |
|
- | - | 2.7GHz ~ 2.9GHz | 11.5dB | 50V | 10A | - | 500mA | 400W | 55V | - | - |
|
|
|
Infineon Technologies |
IC FET RF LDMOS |
2.790 |
|
- | LDMOS | 920MHz ~ 960MHz | 18dB | 30V | - | - | 175mA | 50W | 65V | 2-Flatpack, Fin Leads, Flanged | H-34288-2 |
|
|
|
Infineon Technologies |
IC FET RF LDMOS |
8.532 |
|
- | LDMOS | 920MHz ~ 960MHz | 18dB | 30V | - | - | 1.75A | 50W | 65V | 2-Flatpack, Fin Leads, Flanged | H-34288-2 |