Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 625/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 80V 200MA DO213AA |
4.302 |
|
- | Standard | 80V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 80V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 600V 30A TO247 |
7.452 |
|
- | Standard | 600V | 30A | 2.36V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247 (HA) | -55°C ~ 150°C |
|
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Microsemi |
DIODE SCHOTTKY 80V 1A DO213AB |
6.930 |
|
- | Schottky | 80V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 12A DO203AA |
5.238 |
|
- | Standard | 50V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 3mA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 12A DO203AA |
6.660 |
|
- | Standard, Reverse Polarity | 50V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 3mA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
|
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|
Semtech |
DIODE GEN PURP 2KV 2A AXIAL |
4.068 |
|
Automotive, AEC-Q101 | Standard | 2000V | 2A | 2V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 2000V | - | Through Hole | Axial | Axial | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
8.874 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO220AC |
4.176 |
|
- | Standard | 1000V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 40V 500MA DO35 |
6.318 |
|
- | Schottky | 40V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 40V | 60pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 25A DO203AA |
4.014 |
|
- | Standard | 100V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 12A DO203AA |
6.210 |
|
- | Standard, Reverse Polarity | 150V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2.25mA @ 150V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220AC |
8.550 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
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Microsemi |
DIODE GEN PURP 75V 200MA DO213AA |
2.898 |
|
- | Standard | 75V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Global Power Technologies Group |
DIODE SCHOTTKY 600V 12A TO220-2 |
7.362 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 12A | 1.65V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 600V | 632pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 40V 500MA DO213AA |
7.776 |
|
- | Schottky | 40V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 40V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Semtech |
DIODE GEN PURP 800V 1A AXIAL |
5.976 |
|
- | Standard | 800V | 1A | 2.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 800V | 30pF @ 5V, 1MHz | Through Hole | Axial | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220AC |
5.634 |
|
- | Standard | 200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A TO247AC |
4.608 |
|
HEXFRED® | Standard | 1200V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
5.814 |
|
- | Silicon Carbide Schottky | 650V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 75A TO247AD |
6.840 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 1200V | 75A | 2.55V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 265ns | 420µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 200MA DO213AA |
7.866 |
|
- | Schottky | 20V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 30V 200MA DO213AA |
7.092 |
|
- | Schottky | 30V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 40V 200MA DO213AA |
7.038 |
|
- | Schottky | 40V | 200mA | 500mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Microsemi |
DIODE SCHOTTKY 30V 500MA DO213AA |
3.366 |
|
- | Schottky | 30V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 30V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220AC |
3.078 |
|
- | Standard | 800V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 19A TO252-2 |
3.233 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 19A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 180V 200MA DO213 |
6.930 |
|
- | Standard | 180V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 180V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
6.426 |
|
- | Standard | 1200V | 35A | 2.05V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 7.7µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220AC |
3.508 |
|
- | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO220-2 |
4.518 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |