Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 626/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
3.528 |
|
- | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 12A DO203AA |
4.860 |
|
- | Standard | 300V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1.75mA @ 300V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 12A DO203AA |
3.913 |
|
- | Standard, Reverse Polarity | 300V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1.75mA @ 300V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
2.644 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
6.822 |
|
FRED Pt® | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 60A TO247 |
7.542 |
|
- | Standard | 200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 250µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A TO247AC |
18.140 |
|
- | Standard | 1000V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220FP |
6.678 |
|
- | Standard | 400V | 20A | 1.67V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220FP |
8.190 |
|
- | Standard | 200V | 20A | 1.67V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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|
IXYS |
DIODE GEN PURP 600V 30A TO3P |
3.690 |
|
- | Standard | 600V | 30A | 2.36V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 | TO-3P | -55°C ~ 150°C |
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|
Infineon Technologies |
SIC DIODES |
6.696 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 43A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 53µA @ 420V | 783pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 12A DO203AA |
5.238 |
|
- | Standard | 400V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 12A DO203AA |
3.258 |
|
- | Standard, Reverse Polarity | 400V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO220FP |
4.752 |
|
- | Standard | 1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1000V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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|
IXYS |
DIODE GEN PURP 1.8KV 20A TO247 |
6.264 |
|
- | Standard | 1800V | 20A | 2.24V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 50µA @ 1800V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 20V 500MA DO213AA |
16.741 |
|
- | Schottky | 20V | 500mA | 650mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 30A TO247AC |
4.680 |
|
FRED Pt® | Standard | 300V | 30A | 1.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 38ns | 60µA @ 300V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 50A B-47 |
6.210 |
|
- | Standard, Reverse Polarity | 100V | 50A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Surface Mount | B-47 | B-47 | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220FP |
8.280 |
|
- | Standard | 600V | 20A | 1.67V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 60A TO247AC |
5.166 |
|
- | Standard | 1600V | 60A | 1V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
8.676 |
|
- | Standard, Reverse Polarity | 100V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 12A DO203AA |
2.106 |
|
- | Standard, Reverse Polarity | 800V | 12A | 1.26V @ 38A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
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Littelfuse |
DIODE SIC SCHOTKY 650V 10A TO220 |
2.201 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 650V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
4.392 |
|
- | Standard | 100V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
6.678 |
|
- | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 500V 12A DO203AA |
5.094 |
|
- | Standard | 500V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1.25mA @ 500V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
4.770 |
|
- | Standard | 1200V | 35A (DC) | 1.97V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 30V 200MA DO35 |
3.400 |
|
- | Standard | 30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 30V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Microsemi |
DIODE GEN PURP 125V 200MA DO35 |
4.842 |
|
- | Standard | 125V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 12A DO203AA |
3.809 |
|
- | Standard, Reverse Polarity | 400V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1.5mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |