Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 622/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
5.616 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 560pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
4.719 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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|
Microsemi |
DIODE ULT FAST 5A 50V SMCJ |
8.856 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 100V 5A DO214AB |
3.942 |
|
- | Standard | 100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 150V 5A DO214AB |
7.254 |
|
- | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 5A DO214AB |
5.868 |
|
- | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 300V 5A DO214AB |
2.952 |
|
- | Standard | 300V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 5A DO214AB |
4.392 |
|
- | Standard | 400V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 500V 5A DO214AB |
3.562 |
|
- | Standard | 500V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 500V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 5A DO214AB |
8.694 |
|
- | Standard | 600V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 700V 5A DO214AB |
3.186 |
|
- | Standard | 700V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 700V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 5A DO214AB |
7.488 |
|
- | Standard | 800V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP |
3.654 |
|
- | Standard | 1200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
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|
IXYS |
DIODE GEN PURP 600V 15A TO220FP |
7.578 |
|
- | Standard | 600V | 15A | 2.37V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 600V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220ABFP | -55°C ~ 150°C |
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IXYS |
DIODE GEN PURP 2.2KV 30A TO220AC |
2.214 |
|
- | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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SMC Diode Solutions |
PIV 30V IO 60A CHIP SIZE 200MIL |
7.740 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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SMC Diode Solutions |
PIV 60V IO 60A CHIP SIZE 200MIL |
2.124 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A VSON-4 |
5.868 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
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Microsemi |
DIODE SCHOTTKY 20V 75MA DO213AA |
6.246 |
|
- | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 15V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
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Infineon Technologies |
SIC DIODES |
8.964 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 34A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 420V | 594pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 400V 30A TO247 |
2.754 |
|
- | Standard | 400V | 30A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 32ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 90A 800V TO-247A |
2.340 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 90A 800V TO-247A |
2.052 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi |
DIODE GEN PURP 175V 100MA DO213 |
4.608 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
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|
IXYS |
DIODE GEN PURP 1.2KV 20A TO247 |
3.042 |
|
- | Standard | 1200V | 20A | 2.24V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 (HA) | -55°C ~ 150°C |
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|
IXYS |
DIODE GEN PURP 400V 60A TO247AD |
6.174 |
|
HiPerFRED™ | Standard | 400V | 60A | 1.27V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 400V | - | Through Hole | TO-247-3 | TO-247AD | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 300V 60A TO247 |
3.978 |
|
HiPerFRED™ | Standard | 300V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 400V 60A TO247 |
256 |
|
HiPerFRED™ | Standard | 400V | 60A | 1.47V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 400V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
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|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 30A TO247-2 |
8.550 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 30A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | - | 40µA @ 600V | 527pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 16A DO203AA |
5.508 |
|
- | Standard, Reverse Polarity | 400V | 16A | 1.23V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |