Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 549/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A ITO220AC |
3.996 |
|
- | Standard | 600V | 5A | 3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER PDI5 T&R 1.5K |
5.472 |
|
- | Schottky | 100V | 15A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 7A TO277A |
6.768 |
|
Automotive, AEC-Q101 | Schottky | 50V | 7A | 670mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 560pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7A TO277A |
2.970 |
|
Automotive, AEC-Q101 | Schottky | 60V | 7A | 670mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 560pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
ON Semiconductor |
DIODE SCHOTTKY 50V 3A DPAK |
3.978 |
|
SWITCHMODE™ | Schottky | 50V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 50V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
|
|
Diodes Incorporated |
DIODE SBR 150V 3A 8DFN |
7.596 |
|
SBR® | Super Barrier | 150V | 3A | 910mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 150V | - | Surface Mount | 8-PowerUDFN | U-DFN3030-8 | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A TO263AC |
7.920 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 3A | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 15µA @ 100V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A TO263AC |
7.614 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 3A | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 15µA @ 400V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A TO263AC |
3.490 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 3A | 1.15V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 15µA @ 600V | 67pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab) Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
|
|
Taiwan Semiconductor Corporation |
1A,800V,STD.GLASS PASSIVATED REC |
4.032 |
|
- | Standard | 800V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A ITO220AC |
2.466 |
|
- | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A ITO220AC |
3.294 |
|
- | Standard | 400V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 70pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 4.8A TO277A |
5.490 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 4.8A | 620mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.6mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 20V 5A PMDS |
1.611 |
|
- | Schottky | 20V | 5A | 390mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
8.244 |
|
- | Avalanche | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 3A SOD64 |
3.582 |
|
- | Avalanche | 50V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 3A SOD64 |
8.874 |
|
- | Avalanche | 100V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 50V 3A SOD64 |
3.366 |
|
- | Avalanche | 50V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 50V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 3A SOD64 |
8.802 |
|
- | Avalanche | 100V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 100V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
8.712 |
|
- | Avalanche | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.9A TO277A |
5.040 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 100V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2.9A TO277A |
3.276 |
|
Automotive, AEC-Q101, eSMP® | Standard | 100V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 100V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A |
2.844 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 200V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A |
4.914 |
|
Automotive, AEC-Q101, eSMP® | Standard | 200V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 200V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A |
7.200 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 400V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2.9A TO277A |
8.640 |
|
Automotive, AEC-Q101, eSMP® | Standard | 400V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 400V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2.9A TO277A |
4.356 |
|
Automotive, AEC-Q101, eSMP® | Standard | 600V | 2.9A | 1.05V @ 7A | Standard Recovery >500ns, > 200mA (Io) | 2.6µs | 20µA @ 600V | 76pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Central Semiconductor Corp |
DIODE GEN PURP 200V 3A SMC |
5.364 |
|
- | Standard | 200V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
|
|
Infineon Technologies |
DIODE GEN PURP 600V 14.7A TO252 |
5.076 |
|
- | Standard | 600V | 14.7A (DC) | 2V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 4.6A TO277A |
2.538 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 80V | 4.6A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |