Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 548/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
8.730 |
|
FRED Pt® | Standard | 600V | 6A | 3.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 20µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A D-PAK |
8.730 |
|
FRED Pt® | Standard | 600V | 6A | 3.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 20µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
6.318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO214AB |
2.646 |
|
- | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A DO201AD |
2.304 |
|
Automotive, AEC-Q101 | Schottky | 150V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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|
|
IXYS |
DIODE SCHOTTKY 60V 2A TO92-3 |
7.380 |
|
- | Schottky | 60V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | -40°C ~ 175°C |
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|
Diodes Incorporated |
DIODE SCHOTTKY 70V 5A DO201AD |
8.010 |
|
- | Schottky | 70V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 70V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
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Diodes Incorporated |
DIODE SCHOTTKY 80V 5A DO201AD |
8.316 |
|
- | Schottky | 80V | 5A | 800mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 80V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A DO214AB |
3.636 |
|
- | Standard | 800V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 800V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A DO214AB |
7.974 |
|
- | Standard | 1000V | 10A | 1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 10µA @ 1000V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A DO214AB |
6.102 |
|
Automotive, AEC-Q101 | Standard | 800V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 800V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DO214AB |
5.058 |
|
Automotive, AEC-Q101 | Standard | 1000V | 8A | 985mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 10µA @ 1000V | 79pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
6.714 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 12A | 750mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
8.748 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 100V | 12A | 750mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
6.246 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 750mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
2.646 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 750mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 10A TO220AC |
8.334 |
|
- | Standard | 150V | 10A | 1.05V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
RECTIFIER 200V 8A |
8.766 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO277A |
3.996 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 45V | 10A (DC) | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 10A TO277A |
8.244 |
|
Automotive, AEC-Q101, eSMP®, TMBS® | Schottky | 60V | 10A | 590mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.9mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V ITO-220AB |
4.716 |
|
- | Schottky | 200V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 150V 10A ITO220AB |
3.544 |
|
- | Schottky | 150V | 10A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | - | Through Hole | TO-220-3 | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A TO263AB |
3.924 |
|
- | Standard | 600V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AB |
3.114 |
|
- | Schottky | 60V | 10A | 700mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Diodes Incorporated |
SBR DIODE TO252 |
8.838 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
SBR DIODE TO252 |
7.812 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
6.642 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 10A TO220AC |
2.196 |
|
- | Schottky | 60V | 10A | 700mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
5.472 |
|
- | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 7.5A ITO220AC |
4.140 |
|
- | Schottky | 60V | 7.5A | 750mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |