Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 73/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 20V 120A DPAK |
7.290 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | ±20V | 2830pF @ 10V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 20V 120A DPAK |
5.796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 15A, 10V | 2.45V @ 250µA | 31nC @ 4.5V | ±20V | 2830pF @ 10V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
4.302 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 64A D2PAK |
2.088 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
LV POWER MOS |
7.776 |
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Infineon Technologies |
MOSFET N-CH 80V 40A 8TSDSON |
6.768 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 40A (Tc) | 6V, 10V | 8.4mOhm @ 20A, 10V | 3.8V @ 31µA | 25nC @ 10V | ±20V | 1820pF @ 40V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 24A PQFN |
3.654 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 76A (Tc) | 4.5V, 10V | 3.5mOhm @ 24A, 10V | 2.35V @ 50µA | 30nC @ 4.5V | ±20V | 3100pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3.942 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 29A (Ta), 100A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | ±20V | 2800pF @ 12V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO-252 |
7.884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 50A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 2300pF @ 30V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 53A TO-262 |
5.688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1696pF @ 25V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 8TSON |
3.798 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 4.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 328pF @ 100V | - | 34.7W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | Thin-PAK (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC |
5.760 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 4.5V, 10V | 7mOhm @ 15A, 10V | 3V @ 250µA | 42nC @ 4.5V | ±20V | 3100pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 28A PQFN 5X6 |
4.302 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86nC @ 10V | ±12V | 3710pF @ 10V | - | 3.6W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 100V 11A PQFN 5X6 |
7.308 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 11A (Ta), 58A (Tc) | 10V | 13.5mOhm @ 35A, 10V | 4V @ 100µA | 87nC @ 10V | ±20V | 3240pF @ 25V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 25V 17A DIRECTFET |
8.406 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 17A (Ta), 68A (Tc) | 4.5V, 10V | 4.9mOhm @ 17A, 10V | 2.4V @ 50µA | 18nC @ 4.5V | ±20V | 1570pF @ 13V | - | 2.2W (Ta), 36W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
CONSUMER |
8.028 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A TO220 |
7.470 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 24.9W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 30V 160A DPAK |
8.514 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59nC @ 4.5V | ±20V | 4880pF @ 15V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL_30/40V |
7.956 |
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Infineon Technologies |
SMALL SIGNAL+P-CH |
7.884 |
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Infineon Technologies |
MOSFET N-CH 500V 5.4A TO-220FP |
7.326 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 5.4A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7nC @ 10V | ±20V | 433pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MV POWER MOS |
7.416 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
CONSUMER |
6.516 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9nC @ 10V | ±20V | 363pF @ 400V | - | 21W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC |
5.544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1530pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
4.698 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 100V 13A DPAK |
3.474 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 760pF @ 25V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3.544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
2.790 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 42A DPAK |
5.634 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | - | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | - | 1440pF @ 25V | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
4.860 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 5.1mOhm @ 90A, 10V | 4V @ 60µA | 81nC @ 10V | ±20V | 6500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |