Infineon Technologies Transistoren - FETs, MOSFETs - Single

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Technologie

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Drain to Source Voltage (Vdss)

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Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.

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Antriebsspannung (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (Max)

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Eingangskapazität (Ciss) (Max) @ Vds

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FET-Funktion

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Verlustleistung (max.)

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Betriebstemperatur

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Montagetyp

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Lieferantengerätepaket

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Paket / Fall

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single

HerstellerInfineon Technologies

Datensätze 6.749

Seite 225/225

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	FET-Typ	Technologie	Drain to Source Voltage (Vdss)	Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.	Antriebsspannung (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Eingangskapazität (Ciss) (Max) @ Vds	FET-Funktion	Verlustleistung (max.)	Betriebstemperatur	Montagetyp	Lieferantengerätepaket	Paket / Fall
IPD06P004NATMA1	Infineon Technologies	TRENCH 40<-<100V	3.636	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	16.4A (Tc)	10V	90mOhm @ 16.4A, 10V	4V @ 710µA	27nC @ 10V	±20V	1100pF @ 30V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P005LATMA1	Infineon Technologies	TRENCH 40<-<100V	5.562	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	6.5A (Tc)	4.5V, 10V	250mOhm @ 6.5A, 10V	2V @ 270µA	13.8nC @ 10V	±20V	420pF @ 30V	-	28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P005NATMA1	Infineon Technologies	TRENCH 40<-<100V	2.412	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	6.5A (Tc)	10V	250mOhm @ 6.5A, 10V	4V @ 270µA	10.6nC @ 10V	±20V	420pF @ 30V	-	28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P007NATMA1	Infineon Technologies	TRENCH 40<-<100V	7.488	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	4.3A (Tc)	10V	400mOhm @ 4.3A, 10V	4V @ 166µA	6.7nC @ 10V	±20V	260pF @ 30V	-	19W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPak (2 Leads + Tab), SC-63
IPP90R1K0C3XK	Infineon Technologies	MOSFET N-CH 900V TO-220	7.830	CoolMOS™	N-Channel	MOSFET (Metal Oxide)	900V	5.7A (Tc)	10V	1Ohm @ 3.3A, 10V	3.5V @ 370µA	34nC @ 10V	±20V	850pF @ 100V	-	89W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
AUXDILZ24NS	Infineon Technologies	MOSFET N-CH D2PAK	5.382	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPD25DP06LMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3	3.186	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	6.5A (Tc)	4.5V, 10V	250mOhm @ 6.5A, 10V	2V @ 270µA	13.8nC @ 10V	±20V	420pF @ 30V	-	28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD26DP06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3	6.768	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD390P06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3	7.686	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD650P06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3	3.636	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	22A (Tc)	10V	65mOhm @ 22A, 10V	4V @ 1.04mA	39nC @ 10V	±20V	1600pF @ 30V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD950P06NMSAUMA1	Infineon Technologies	MOSFET P-CH 60V TO252-3	4.824	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
ISP13DP06NMSATMA1	Infineon Technologies	MOSFET P-CH 60V SOT223-3	5.238	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-SOT223	TO-261-3
ISP25DP06LMSATMA1	Infineon Technologies	MOSFET P-CH 60V SOT223-3	4.590	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	1.9A (Ta)	4.5V, 10V	250mOhm @ 1.9A, 10V	2V @ 270µA	13.9nC @ 10V	±20V	420pF @ 30V	-	1.8W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223	TO-261-3
ISP26DP06NMSATMA1	Infineon Technologies	MOSFET P-CH 60V SOT223-3	4.878	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-SOT223	TO-261-3
IPD06P002NSAUMA1	Infineon Technologies	MOSFET P-CH TO252-3	5.760	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	35A (Tc)	10V	38mOhm @ 35A, 10V	4V @ 1.7mA	63nC @ 10V	±20V	2500pF @ 30V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P003NSAUMA1	Infineon Technologies	MOSFET P-CH TO252-3	6.912	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	22A (Tc)	10V	65mOhm @ 22A, 10V	4V @ 1.04mA	39nC @ 10V	±20V	1600pF @ 30V	-	83W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P004NSAUMA1	Infineon Technologies	MOSFET P-CH TO252-3	5.544	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	16.4A (Tc)	10V	90mOhm @ 16.4A, 10V	4V @ 710µA	27nC @ 10V	±20V	1100pF @ 30V	-	63W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P005LSAUMA1	Infineon Technologies	MOSFET P-CH TO252-3	7.596	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	6.5A (Tc)	4.5V, 10V	250mOhm @ 6.5A, 10V	2V @ 270µA	13.8nC @ 10V	±20V	420pF @ 30V	-	28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
IPD06P005NSAUMA1	Infineon Technologies	MOSFET P-CH TO252-3	8.496	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	60V	6.5A (Tc)	10V	250mOhm @ 6.5A, 10V	4V @ 270µA	10.6nC @ 10V	±20V	420pF @ 30V	-	28W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3-313	TO-252-3, DPak (2 Leads + Tab), SC-63
ISP06P008NSATMA1	Infineon Technologies	MOSFET P-CH SOT223-3	7.146	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-SOT223	TO-261-3
ISP06P005LSATMA1	Infineon Technologies	MOSFET P-CH SOT223-3	6.192	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-SOT223	TO-261-3
ISP06P005NSATMA1	Infineon Technologies	MOSFET P-CH SOT223-3	5.940	OptiMOS™	P-Channel	MOSFET (Metal Oxide)	-	-	-	-	-	-	-	-	-	-	-	Surface Mount	PG-SOT223	TO-261-3
IPB12CN10NGATMA2	Infineon Technologies	MOSFET N-CH 100V 67A TO263-3	2.556	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRF3717TRPBF-1	Infineon Technologies	MOSFET N-CH 20V 20A 8-SOIC	6.840	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLR8721TRPBF-1	Infineon Technologies	MOSFET N-CH 30V 65A DPAK	8.424	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC048N	Infineon Technologies	MOSFET N-CH	4.680	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC048NB	Infineon Technologies	MOSFET N-CH	4.392	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC10N65C3X1SA1	Infineon Technologies	TRANSISTOR NPN	2.412	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SIPC69SN60C3X2SA1	Infineon Technologies	TRANSISTOR NPN	5.418	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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