Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 72/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
CONSUMER |
5.904 |
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Infineon Technologies |
MOSFET N-CH 60V 20A TSDSON-8 |
6.588 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 7.6mOhm @ 20A, 10V | 4V @ 35µA | 50nC @ 10V | ±20V | 4000pF @ 30V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 650V 3.9A TO-252 |
3.400 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1nC @ 10V | ±20V | 380pF @ 100V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 3.9A TO-252 |
2.700 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1nC @ 10V | ±20V | 380pF @ 100V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
LOW POWER_LEGACY |
8.676 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1nC @ 10V | ±20V | 380pF @ 100V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 14A DPAK |
2.466 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Tc) | 10V | 180mOhm @ 8.3A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 620pF @ 25V | - | 86W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 21A 8TSDSON |
5.166 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | - | 32nC @ 10V | ±20V | 2300pF @ 20V | - | 2.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 22A 8SON |
8.982 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.8mOhm @ 20A, 10V | 2V @ 250µA | 26nC @ 10V | ±20V | 1600pF @ 15V | - | 2.1W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
5.166 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | Super Junction | 26W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO252-3 |
2.718 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 47.1nC @ 10V | ±20V | 3785pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR P-CH BARE DIE |
7.182 |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
7.812 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 56A DPAK |
7.560 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 56A (Tc) | 10V | 16mOhm @ 34A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 2430pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
6.750 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | 4V @ 40µA | 35nC @ 10V | ±20V | 2350pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CHANNEL 60V 64A 8TDSON |
8.586 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 64A (Tc) | 4.5V, 10V | 6.5mOhm @ 32A, 10V | 2.3V @ 20µA | 13nC @ 4.5V | ±20V | 1800pF @ 30V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 75V 56A I-PAK |
3.978 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89nC @ 10V | ±20V | 3107pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
TRANSISTOR N-CH |
2.682 |
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Infineon Technologies |
MOSFET N-CH 55V 30A I-PAK |
8.712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | ±16V | 1870pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
5.508 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
8.118 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 130µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | Super Junction | 30W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK |
7.326 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | - | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | - | 660pF @ 50V | - | - | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
8.568 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | - | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | - | 900pF @ 25V | - | - | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
2.754 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 150V 18A DPAK |
2.322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43nC @ 10V | ±30V | 900pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8DSO |
3.582 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2V @ 250µA | 73nC @ 10V | ±20V | 5700pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 2.8A SOT-223 |
6.894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | ±20V | 400pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
2.862 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3 |
5.904 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT223 |
2.754 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |