Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 44/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 40V 90A TO252-3-313 |
7.434 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 2.4mOhm @ 90A, 10V | 4V @ 95µA | 118nC @ 10V | ±20V | 9430pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO252 |
4.590 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | 712pF @ 400V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 41A 8TDSON |
7.704 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 41A (Ta), 100A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2V @ 250µA | 57nC @ 10V | ±16V | 3900pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON |
3.996 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.5mOhm @ 50A, 10V | 2V @ 60µA | 95nC @ 10V | ±16V | 5340pF @ 25V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 35A TDSON-8 |
7.956 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta), 100A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2V @ 250µA | 52nC @ 10V | ±20V | 3300pF @ 15V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 9.3A PQFN56 |
7.542 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 46A (Tc) | 10V | 18mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1510pF @ 50V | - | 3.1W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 5.2A SOT223 |
4.194 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5.2A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | ±16V | 870pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 12A TO252-3 |
2.304 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET-MX |
2.520 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 100µA | 53nC @ 4.5V | ±20V | 4280pF @ 13V | - | 2.8W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 28A 8VQFN |
8.316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 100A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 150µA | 110nC @ 10V | ±20V | 4490pF @ 20V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8TDSON |
6.048 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 6V, 10V | 3.4mOhm @ 50A, 10V | 3.3V @ 41µA | 41nC @ 10V | ±20V | 3000pF @ 30V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8-PQFN |
7.002 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Ta), 100A (Tc) | 10V | 4.1mOhm @ 50A, 10V | 4V @ 150µA | 100nC @ 10V | ±20V | 4175pF @ 30V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 5.1A 8PQFN |
5.058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 5.1A (Ta) | 10V | 55mOhm @ 7.5A, 10V | 5V @ 150µA | 54nC @ 10V | ±20V | 2290pF @ 100V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO263-3 |
13.572 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 11.3mOhm @ 70A, 10V | 4V @ 83µA | 66nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 8.3A DIRECTFET |
5.328 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1360pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N CH 40V 90A DIRECTFET MX |
6.192 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 1.4mOhm @ 90A, 10V | 3.9V @ 150µA | 212nC @ 10V | ±20V | 6852pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 209A |
8.514 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 209A (Tc) | 4.5V, 10V | 1.25mOhm @ 123A, 10V | 2.5V @ 150µA | 111nC @ 4.5V | ±20V | 6904pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 25V 40A 8TDSON IND |
6.462 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 0.95mOhm @ 30A, 10V | 2V @ 250µA | 49nC @ 10V | ±16V | 3200pF @ 12V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 150V 4.9A DIRECTFET |
3.544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.9A (Ta), 28A (Tc) | 10V | 56mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | ±20V | 1411pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
7.596 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18nC @ 10V | ±20V | 807pF @ 400V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 95A 8PQFN |
7.056 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | ±20V | 3174pF @ 25V | - | 4.3W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
2.214 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8TDSON |
4.878 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2.3V @ 49µA | 30nC @ 4.5V | ±20V | 4400pF @ 30V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
2.214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.8mOhm @ 50A, 10V | 3.3V @ 50µA | 49nC @ 10V | ±20V | 3375pF @ 30V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
3.726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.8V @ 95µA | 76nC @ 10V | ±20V | 5600pF @ 40V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
6.534 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 11.4A (Ta), 90A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 110µA | 44nC @ 10V | ±20V | 2900pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 31A MX |
2.844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 53nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
7.290 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 50A, 10V | 2V @ 85µA | 150nC @ 10V | ±20V | 12000pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET |
6.354 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | ±16V | 4160pF @ 13V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
6.012 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 48nC @ 4.5V | ±20V | 6300pF @ 15V | - | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |