Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 42/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 20V 16A 8-SOIC |
3.726 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 16A (Ta) | 2.8V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 62nC @ 5V | ±12V | 3640pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 40A TSDSON-8 |
5.094 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Ta), 40A (Tc) | 6V, 10V | 16mOhm @ 20A, 10V | 3.5V @ 12µA | 25nC @ 10V | ±20V | 1700pF @ 50V | - | 2.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 800V 7A TO252-3 |
7.200 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | 460pF @ 500V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
3.258 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92nC @ 10V | ±16V | 1870pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8-PQFN |
3.186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Ta), 40A (Tc) | 10V | 14.4mOhm @ 24A, 10V | 4V @ 50µA | 35nC @ 10V | ±20V | 1256pF @ 25V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
3.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Ta), 100A (Tc) | 10V | 1.9mOhm @ 50A, 10V | 4V @ 85µA | 108nC @ 10V | ±20V | 8800pF @ 20V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 37A TSDSON-8 |
3.366 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 37A (Tc) | 10V | 24mOhm @ 20A, 10V | 4V @ 35µA | 27nC @ 10V | ±20V | 1900pF @ 60V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12.5A 8-SOIC |
6.066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4.5V, 10V | 9mOhm @ 12.5A, 10V | 1V @ 250µA | 78nC @ 10V | ±20V | 2240pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 8TDSON |
5.958 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 7V, 10V | 3.1mOhm @ 20A, 10V | 3.4V @ 30µA | 41nC @ 10V | ±20V | 2310pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 6.9A 8-SOIC |
2.250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.9A (Ta) | 10V | 26mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61nC @ 10V | ±20V | 3180pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 2A SOT-223 |
6.498 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 2A (Ta) | 4V, 10V | 140mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | ±16V | 230pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
6.624 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 1900pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 80A TO252-3 |
8.460 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 6.8mOhm @ 80A, 10V | 2V @ 130µA | 80nC @ 10V | +5V, -16V | 5700pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 12A 8-SOIC |
7.488 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Ta) | 10V | 9.4mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | ±20V | 1560pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 21A |
2.340 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12nC @ 10V | ±20V | 887pF @ 75V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
13.128 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 5.4mOhm @ 80A, 10V | 4V @ 58µA | 82nC @ 10V | ±20V | 6600pF @ 30V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
8.820 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 10V, 16V | 8mOhm @ 14A, 16V | 4V @ 250µA | 59nC @ 10V | ±30V | 2410pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 40A 8TSDSON |
5.094 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 4.5V, 10V | 15mOhm @ 20A, 10V | 2.1V @ 33µA | 35nC @ 10V | ±20V | 2500pF @ 50V | - | 2.1W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO252 |
2.628 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 800V 5.7A TO252-3 |
4.788 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 53A D2PAK |
18.264 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1696pF @ 25V | - | 3.8W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
7.614 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 55A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 250µA | 17nC @ 4.5V | ±20V | 1300pF @ 15V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
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Infineon Technologies |
MOSFET N-CH 60V 84A D2PAK |
16.968 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3210pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 64A D2PAK |
18.288 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 550V 18.1A TO252 |
8.154 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 18.1A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
7.920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 10V | 3.8mOhm @ 90A, 10V | 4V @ 90µA | 98nC @ 10V | ±20V | 8000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 58A |
7.578 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 6V, 10V | 9.9mOhm @ 35A, 10V | 3.7V @ 50µA | 66nC @ 10V | ±20V | 2170pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO263-3 |
13.638 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.3mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO263-3 |
18.228 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.1mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 90A TO-252 |
3.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 90A (Tc) | 4.5V, 10V | 3.2mOhm @ 60A, 10V | 2V @ 70µA | 41nC @ 5V | ±20V | 5200pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |