Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 32/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
COOLMOS P7 800V SOT-223 |
27.690 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | 460pF @ 500V | - | 7.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
14.940 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7nC @ 400V | ±16V | 158pF @ 400V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
17.448 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 400V | ±16V | 211pF @ 400V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CHANNEL 700V 4A IPAK |
17.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8nC @ 10V | ±20V | 163pF @ 100V | - | 42W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO252-3 |
38.910 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
17.112 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 400V | ±16V | 306pF @ 400V | - | 34.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 700V 8.7A TO251-3 |
12.414 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 8.7A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | 328pF @ 100V | - | 94W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-347 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
19.782 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 400V | ±16V | 364pF @ 400V | - | 43.1W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
16.836 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1nC @ 400V | ±16V | 424pF @ 400V | - | 50W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 700V 10.5A IPAK |
15.258 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 10.5A (Tc) | 10V | 600mOhm @ 1A, 10V | 3.5V @ 210µA | 22nC @ 10V | ±20V | 474pF @ 100V | - | 86W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 2A TO251 |
18.582 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 2A (Tc) | 10V | 3.7Ohm @ 800mA, 10V | 3.5V @ 40µA | 6nC @ 10V | ±20V | 196pF @ 400V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
16.458 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 12.5A (Tc) | 10V | 360mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 400V | ±16V | 517pF @ 400V | - | 59.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 4A TO251 |
20.154 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10nC @ 10V | ±20V | 330pF @ 400V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 6A TO251 |
20.238 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15nC @ 10V | ±20V | 478pF @ 400V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 950V 9A TO251 |
14.562 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23nC @ 10V | ±20V | 712pF @ 400V | - | 73W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET NCH 650V 45A PG-HDSOP-10 |
13.272 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 150mOhm @ 5.3A, 10V | 4V @ 260µA | 23nC @ 10V | ±20V | 902pF @ 400V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
23.478 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1380pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 660A PG-HSOG-8-1 |
19.356 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 165A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.8V @ 108µA | 90nC @ 10V | ±20V | 6370pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing |
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Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK |
20.712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 70mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 650V 54A PG-HDSOP-10 |
17.796 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 125mOhm @ 6.4A, 10V | 4V @ 320µA | 27nC @ 10V | ±20V | 1080pF @ 400V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MV POWER MOS |
19.458 |
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OptiMOS™ 5 | N-Channel | MOSFET (Metal Oxide) | 80V | 52A (Ta), 169A (Tc) | 6V, 10V | 2.9mOhm @ 150A, 10V | 3.8V @ 108µA | 87nC @ 10V | ±20V | 6500pF @ 40V | - | 168W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7 |
13.650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 1.1mOhm @ 100A, 10V | 2V @ 200µA | 346nC @ 10V | ±20V | 29000pF @ 20V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
13.242 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 4VSON |
28.956 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 105mOhm @ 10.5A, 10V | 4V @ 530µA | 45nC @ 10V | ±20V | 1952pF @ 400V | - | 137W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET NCH 650V 66A PG-HDSOP-10 |
16.350 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 102mOhm @ 7.8A, 10V | 4V @ 390µA | 34nC @ 10V | ±20V | 1320pF @ 400V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220 |
18.354 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO220-3 |
9.960 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 6.8mOhm @ 80A, 10V | 2V @ 250µA | 246nC @ 10V | ±20V | 5400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 586A PG-HSOG-8-1 |
16.302 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 4.5V, 10V | 0.72mOhm @ 100A, 10V | 2.4V @ 250µA | 269nC @ 4.5V | ±20V | 16000pF @ 20V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
11.484 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28nC @ 10V | ±20V | 1199pF @ 400V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET NCH 650V 83A PG-HDSOP-10 |
14.322 |
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CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 80mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1640pF @ 400V | - | 174W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |