Infineon Technologies Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 35/225
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET N-CH 75V 80A TO-262 |
16.452 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N CH 40V 120A TO220AB |
21.744 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | ±20V | 3183pF @ 25V | - | 99W (Tc) | - | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 100A D2PAK |
29.976 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 10V | 3mOhm @ 80A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 7020pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N CH 60V 240A D2PAK |
20.916 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 240A (Tc) | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300nC @ 10V | ±20V | 9990pF @ 25V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 49A TO220FP |
16.596 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 12mOhm @ 26A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 2900pF @ 25V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK |
21.000 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 64A TO-247AC |
29.814 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 1900pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 88A D2PAK |
18.564 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 70A TO220-3 |
22.122 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 11.6mOhm @ 70A, 10V | 4V @ 83µA | 66nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 140A DPAK |
93.102 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
18.438 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 140A TO-220AB |
14.892 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 140A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 34A TO-220AB FP |
18.486 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 34A (Tc) | 10V | 16mOhm @ 20A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 46W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 142A TO-220AB |
42.360 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 142A (Tc) | 10V | 7.5mOhm @ 85A, 10V | 4V @ 250µA | 320nC @ 10V | ±20V | 7750pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 120A TO-262 |
8.184 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 97A TO-262 |
23.910 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 80V 75A TO220-3 |
12.264 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 6V, 10V | 3.7mOhm @ 75A, 10V | 3.5V @ 155µA | 117nC @ 10V | ±20V | 8110pF @ 40V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
18.432 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | ±20V | 11570pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 120A TO220-3 |
11.244 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210nC @ 10V | ±20V | 14300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 240A TO-262 |
6.852 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | 10V | 1.3mOhm @ 195A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 7630pF @ 19V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Wide | TO-262-3 Wide Leads |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V 104A TO220AB |
21.432 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | 5V @ 250µA | 120nC @ 10V | ±20V | 5270pF @ 50V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK |
7.368 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
6.780 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 550V 23A TO-247 |
7.506 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 3.5V @ 930µA | 64nC @ 10V | ±20V | 2540pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 160A D2PAK-7 |
7.992 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 25A TO220-3 |
10.380 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 25A TO-262 |
11.328 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70nC @ 10V | ±20V | 2500pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V 22A TO247-4 |
6.852 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
|
|
|
Infineon Technologies |
MOSFET N-CH 650V 31A TO-220 |
8.148 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 31A (Tc) | 10V | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | ±20V | 2800pF @ 100V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 1.4A SOT-363 |
6.714 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4.5V, 10V | 160mOhm @ 1.4A, 10V | 2V @ 3.7µA | 0.6nC @ 5V | ±20V | 94pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |