Global Power Technologies Group Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerGlobal Power Technologies Group
Datensätze 133
Seite 1/5
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A DPAK |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | ±30V | 210pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 400V 2A IPAK |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4V @ 250µA | 3.7nC @ 10V | ±30V | 210pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A DPAK |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8Ohm @ 1.25A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 395pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A TO220 |
4.986 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8Ohm @ 1.25A, 10V | 4V @ 250µA | 9nC @ 10V | ±30V | 395pF @ 25V | - | 52.1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 2.5A IPAK |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 2.8Ohm @ 1.25A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 395pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A TO220 |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 800V 3A IPAK |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4.2Ohm @ 1.5A, 10V | 4V @ 250µA | 19nC @ 10V | ±30V | 696pF @ 25V | - | 94W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220F |
4.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 38.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 900V 4A TO220 |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 4A (Tc) | 10V | 4Ohm @ 2A, 10V | 4V @ 250µA | 25nC @ 10V | ±30V | 955pF @ 25V | - | 123W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 400V 3.4A DPAK |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 4V @ 250µA | 7.1nC @ 10V | ±30V | 522pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 400V 3.4A IPAK |
6.858 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.4A (Tc) | 10V | 1.6Ohm @ 1.7A, 10V | 4V @ 250µA | 7.1nC @ 10V | ±30V | 522pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A DPAK |
5.346 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220F |
2.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A TO220 |
4.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 4.5A IPAK |
3.960 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.65Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | ±30V | 627pF @ 25V | - | 92.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A DPAK |
8.604 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A TO220F |
5.490 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 650V 5.5A IPAK |
5.706 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 5.5A (Tc) | 10V | 1.6Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 1177pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 700V 5A TO220F |
6.426 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 5A (Tc) | 10V | 1.65Ohm @ 2.5A, 10V | 4V @ 250µA | 23nC @ 10V | ±30V | 1500pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A DPAK |
2.430 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A TO220F |
4.446 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 17.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 250V 8A TO220 |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 5V @ 250µA | 8.4nC @ 10V | ±30V | 423pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 500V 8A IPAK |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 21nC @ 10V | ±30V | 937pF @ 25V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 800V 8A TO220F |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 1.4Ohm @ 4A, 10V | 4V @ 250µA | 46nC @ 10V | ±30V | 1921pF @ 25V | - | 40.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A DPAK |
3.258 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A TO220 |
5.868 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 200V 9A IPAK |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 5V @ 250µA | 8.6nC @ 10V | ±30V | 414pF @ 25V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Global Power Technologies Group |
MOSFET N-CH 500V 8.5A TO220F |
6.480 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 850mOhm @ 4.25A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 1195pF @ 25V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Global Power Technologies Group |
MOSFET N-CH 500V 8.5A TO220 |
4.140 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.5A (Tc) | 10V | 850mOhm @ 4.25A, 10V | 4V @ 250µA | 24nC @ 10V | ±30V | 1195pF @ 25V | - | 127W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Global Power Technologies Group |
MOSFET N-CH 600V 9A TO220F |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 1Ohm @ 4.5A, 10V | 4V @ 250µA | 27nC @ 10V | ±30V | 1440pF @ 25V | - | 51.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |