Diodes Incorporated Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerDiodes Incorporated
Datensätze 1.718
Seite 4/58
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Diodes Incorporated |
MOSFET P-CH 60V 1.7A SOT223 |
81.444 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Ta) | 4.5V, 10V | 390mOhm @ 900mA, 10V | 1V @ 250µA | 5.9nC @ 10V | ±20V | 219pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 2.8A SOT23-6 |
1.117.716 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.8A (Ta) | 4.5V, 10V | 80mOhm @ 4.8A, 10V | 1V @ 250µA | 5.8nC @ 10V | ±20V | 459pF @ 40V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 3.7A SOT-23-6 |
173.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.7A (Ta) | 4.5V, 10V | 50mOhm @ 7.8A, 10V | 1V @ 250µA | 12.6nC @ 10V | ±20V | 600pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 100V 1.3A SOT23-6 |
173.052 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 6V, 10V | 350mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | ±20V | 424pF @ 50V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 240V 500MA SOT223 |
281.244 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 500mA (Ta) | 2.5V, 10V | 5.5Ohm @ 500mA, 10V | 1.8V @ 1mA | - | ±40V | 200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 250V 230MA SOT-23-6 |
231.162 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 230mA (Ta) | 2.4V, 10V | 8.5Ohm @ 500mA, 10V | 1.8V @ 1mA | 3.65nC @ 10V | ±40V | 72pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 70V 5.7A D PAK |
227.916 |
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- | P-Channel | MOSFET (Metal Oxide) | 70V | 3.8A (Ta) | 4.5V, 10V | 160mOhm @ 2.1A, 10V | 1V @ 250µA | 18nC @ 10V | ±20V | 635pF @ 40V | - | 2.11W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 250V 0.197A SOT-23-6 |
110.586 |
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- | P-Channel | MOSFET (Metal Oxide) | 250V | 197mA (Ta) | 3.5V, 10V | 14Ohm @ 200mA, 10V | 2V @ 1mA | 3.45nC @ 10V | ±40V | 73pF @ 25V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 40V 10.3A PWRDI3333 |
83.454 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 10.3A (Ta) | 4.5V, 10V | 13mOhm @ 10A, 10V | 3V @ 250µA | 68.6nC @ 10V | ±20V | 3426pF @ 20V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 60V 7.7A POWERDI3333 |
1.039 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 7.7A (Ta) | 4.5V, 10V | 25mOhm @ 5A, 10V | 3V @ 250µA | 53.1nC @ 10V | ±20V | 2569pF @ 30V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 70V 3.8A SOT-223 |
173.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 70V | 2.7A (Ta) | 4.5V, 10V | 130mOhm @ 4.4A, 10V | 1V @ 250µA | 7.4nC @ 10V | ±20V | 298pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 40V 5A SOT223 |
550.950 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 5A (Ta) | 4.5V, 10V | 50mOhm @ 4.5A, 10V | 1V @ 250µA | 18.2nC @ 10V | ±20V | 770pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 710MA SOT223 |
168.138 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 710mA (Ta) | 10V | 2Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 18V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 450V 140MA SOT223 |
78.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 140mA (Ta) | 10V | 50Ohm @ 100mA, 10V | 3V @ 1mA | - | ±20V | 70pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 100V 3A DPAK |
47.184 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 6V, 10V | 235mOhm @ 2.1A, 10V | 4V @ 250µA | 16.5nC @ 10V | ±20V | 717pF @ 50V | - | 2.15W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V 17A TO252 |
128.772 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.1V @ 250µA | 59.2nC @ 4.5V | ±20V | 6234pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 250V 310MA SOT223 |
279.144 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 310mA (Ta) | 2.5V, 10V | 8.5Ohm @ 500mA, 10V | 1.8V @ 1mA | 3.65nC @ 10V | ±40V | 72pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 500MA SOT223 |
20.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Ta) | 10V | 4Ohm @ 1A, 10V | 2.4V @ 1mA | - | ±20V | 75pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 450V 0.075A SOT223 |
286.560 |
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- | P-Channel | MOSFET (Metal Oxide) | 450V | 75mA (Ta) | 10V | 150Ohm @ 50mA, 10V | 4.5V @ 1mA | - | ±20V | 120pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 200V 320MA SOT223 |
26.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 320mA (Ta) | 3V, 5V | 10Ohm @ 250mA, 5V | 1.5V @ 1mA | - | ±20V | 85pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 30V 4.6A SOT223 |
46.500 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 5.4A (Ta) | 4.5V, 10V | 45mOhm @ 4.2A, 10V | 1V @ 250µA | 29.6nC @ 10V | ±20V | 1022pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V SOT223 |
104.262 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4.8A (Ta) | 4.5V, 10V | 50mOhm @ 3.6A, 10V | 1V @ 250µA | 20.4nC @ 10V | ±20V | 1063pF @ 30V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 60V 450MA SOT223 |
50.010 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 450mA (Ta) | 10V | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | ±20V | 100pF @ 18V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 240V 0.48A SOT223 |
56.724 |
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- | P-Channel | MOSFET (Metal Oxide) | 240V | 480mA (Ta) | 3.5V, 10V | 9Ohm @ 200mA, 10V | 2V @ 1mA | - | ±40V | 200pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 2.9A SOT223 |
55.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 2.9A (Ta) | 10V | 125mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 859pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 60V 6.9A SOT223 |
228.018 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5.4A (Ta) | 10V | 40mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | ±20V | 1407pF @ 40V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 40V 9.1A 8-SO |
109.884 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 9.1A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 1.45W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 100V 3.8A DPAK |
834.972 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.8A (Ta) | 6V, 10V | 150mOhm @ 2.8A, 10V | 4V @ 250µA | 26.9nC @ 10V | ±20V | 1055pF @ 50V | - | 2.17W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 100V 9.4A |
51.300 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta), 98A (Tc) | 4.5V, 10V | 9.5mOhm @ 13A, 10V | 3.5V @ 250µA | 71nC @ 10V | ±20V | 3000pF @ 50V | - | 1.2W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET P-CH 100V 2.6A SOT223 |
267.072 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 6V, 10V | 150mOhm @ 2.8A, 10V | 4V @ 250µA | 26.9nC @ 10V | ±20V | 1055pF @ 50V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |