Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 91/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 250V 4.4A TO-262 |
5.310 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 250V 4.4A D2PAK |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 4.4A D2PAK |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 260pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-262 |
5.616 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
4.806 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-262 |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A D2PAK |
4.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A D2PAK |
3.690 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 5.1A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 18A TO-262 |
6.354 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK |
4.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK |
5.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-262 |
8.280 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 2A TO-262 |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 170pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 2A D2PAK |
6.318 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 170pF @ 25V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 2A D2PAK |
7.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 2A (Tc) | 10V | 3.6Ohm @ 1.2A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 170pF @ 25V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A TO-262 |
7.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A D2PAK |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 3.3A D2PAK |
6.948 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.3A (Tc) | 10V | 1.8Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 410pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
4.446 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-262 |
6.678 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 600pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
6.750 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | - | 3.1W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 450V 4.9A TO-262 |
6.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 4.9A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 680pF @ 25V | - | - | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A TO-262 |
7.326 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | - | - | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A D2PAK |
2.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A D2PAK |
6.372 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 300V 6.1A D2PAK |
8.082 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 6.1A (Tc) | 10V | 750mOhm @ 3.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 430pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |