Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 78/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 500V 2.1A TO220FP |
7.992 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 650V 22A TO-247AC |
6.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 2415pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 30A TO-247AC |
6.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 30A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 96nC @ 10V | ±30V | 2550pF @ 100V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 20.3A PWRPAK8X8 |
8.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20.3A (Tc) | 10V | 170mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | ±30V | 2404pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 500V 3.1A TO220FP |
8.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.9A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220 |
8.694 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 68nC @ 10V | ±30V | 1900pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 450V 9.5A TO-247AC |
5.112 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 9.5A (Tc) | 10V | 630mOhm @ 5.7A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1400pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO263 |
6.570 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO263 |
6.048 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8A TO-220AB |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 39nC @ 10V | ±30V | 1100pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A TO247AC |
6.714 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO263 |
6.048 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V TO-220AB |
3.960 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
4.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2300pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
7.164 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 3900pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO247AC |
5.652 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CHAN 650V 23A POWERPAK |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 17nC @ 10V | ±30V | 2780pF @ 100V | - | 202W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 650V 28A TO-247AC |
5.832 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 146nC @ 10V | ±30V | 3249pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-247AC |
6.120 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 98mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | 3454pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 3.6A TO-220AB |
7.614 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 3.6A (Tc) | 10V | 3.7Ohm @ 2.2A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 3.5A TO220FP |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Tc) | 10V | 1.2Ohm @ 2.1A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AD |
7.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76nC @ 10V | ±30V | 2942pF @ 25V | - | 250mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 600V TO-247AC |
7.236 |
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Vishay Siliconix |
MOSFET N-CH 600V 47A TO-247AD |
3.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 65mOhm @ 24A, 10V | 4V @ 250µA | 225nC @ 10V | ±30V | 4854pF @ 100V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 73A TO-247AD |
2.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | ±20V | 7700pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 17A TO-220AB |
5.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 120nC @ 10V | ±30V | 2830pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 73A TO247AC |
6.300 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 73A (Tc) | 10V | 39mOhm @ 36A, 10V | 4V @ 250µA | 362nC @ 10V | ±30V | 7700pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 64A TO247AC |
7.578 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 64A (Tc) | 10V | 47mOhm @ 32A, 10V | 4V @ 250µA | 369nC @ 10V | ±30V | 7497pF @ 100V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 900V 6.7A TO-247AC |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 6.7A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 2900pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 3900pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |