Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 100/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 50V 50A D2PAK |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 50A (Tc) | 10V | 24mOhm @ 32A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 1800pF @ 25V | - | 3.7W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V SOT223 |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 55V 1.6A SOT223 |
7.218 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 1.6A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 20V 36A I-PAK |
2.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 20mOhm @ 18A, 10V | 3V @ 250µA | 9.7nC @ 4.5V | ±20V | 670pF @ 10V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB |
2.484 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 420mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | 2700pF @ 25V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 55V 75A TO-220AB |
2.898 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 55V 75A TO-220AB |
3.006 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 75V 75A D2PAK |
6.048 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 75A D2PAK |
2.322 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3270pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 55V 75A D2PAK |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 55V 75A D2PAK |
2.214 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 55V 30A I-PAK |
7.812 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 55V 30A I-PAK |
7.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 55V 30A I-PAK |
6.480 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 740pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 500V 17A TO-220AB |
3.942 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 17A (Tc) | 10V | 350mOhm @ 10A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2210pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 6.7A TO220FP |
7.902 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6.7A (Tc) | 10V | 350mOhm @ 4A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2160pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 8A TO-262 |
4.284 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 435mOhm @ 4.8A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 250V 8A TO-220AB |
7.758 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 435mOhm @ 4.8A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 8A D2PAK |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 8A (Tc) | 10V | 435mOhm @ 4.8A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 620pF @ 25V | - | 3.8W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A TO-262 |
7.524 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 6.8A TO220FP |
4.446 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6.8A (Tc) | 10V | 380mOhm @ 4.1A, 10V | 5V @ 250µA | 92nC @ 10V | ±30V | 2220pF @ 25V | - | 46W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 500V 4.7A TO220FP |
4.932 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 4.7A (Tc) | 10V | 800mOhm @ 2.4A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1000pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC |
2.160 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 125mOhm @ 14A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 2040pF @ 25V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
3.240 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 370mOhm @ 8.4A, 10V | 5V @ 250µA | 77nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-220AB |
4.734 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 460mOhm @ 9A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 2720pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 44A TO-247AC |
7.200 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 44A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 3860pF @ 25V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 15A TO-247AC |
3.618 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Tc) | 10V | 460mOhm @ 9A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 2720pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 22A TO-247AC |
4.158 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Ta) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 34A SUPER247 |
4.518 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 34A (Tc) | 10V | 145mOhm @ 20A, 10V | 5V @ 250µA | 230nC @ 10V | ±30V | 5580pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Vishay Siliconix |
MOSFET N-CH 600V 30A SUPER247 |
3.978 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 190mOhm @ 18A, 10V | 5V @ 250µA | 220nC @ 10V | ±30V | 5870pF @ 25V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |