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Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Single

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 377
Seite 13/13
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Transistortyp
Strom - Kollektor (Ic) (max.)
Spannung - Kollektor-Emitter-Durchschlag (max.)
Vce-Sättigung (Max) @ Ib, Ic
Strom - Kollektorabschaltung (max.)
Gleichstromverstärkung (hFE) (min) @ Ic, Vce
Leistung - max
Frequenz - Übergang
Betriebstemperatur
Montagetyp
Paket / Fall
Lieferantengerätepaket
2SD2257(CANO,A,Q)
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
2.142
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257(CANO,Q,M)
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
6.426
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257(Q,M)
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
3.186
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257,KEHINQ(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
3.132
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257,NIKKIQ(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
7.632
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2257,Q(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 100V TO220-3
4.266
-
NPN
3A
100V
1.5V @ 1.5mA, 1.5A
10µA (ICBO)
2000 @ 2A, 2V
2W
-
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SD2695(T6CANO,A,F
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
2.034
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695(T6CANO,F,M
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
4.158
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695(T6CNO,A,F)
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
3.636
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695,T6F(J
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
8.028
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SD2695,T6F(M
Toshiba Semiconductor and Storage
TRANS NPN 2A 60V TO226-3
3.598
-
NPN
2A
60V
1.5V @ 1mA, 1A
10µA (ICBO)
2000 @ 1A, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
TTC009,F(J
Toshiba Semiconductor and Storage
TRANS NPN 3A 80V TO220-3
2.664
-
NPN
3A
80V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 5V
2W
150MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
TTC009,F(M
Toshiba Semiconductor and Storage
TRANS NPN 3A 80V TO220-3
7.398
-
NPN
3A
80V
500mV @ 100mA, 1A
100nA (ICBO)
100 @ 500mA, 5V
2W
150MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NIS
2SA1020-Y,F(M
Toshiba Semiconductor and Storage
TRANS PNP 2A 50V TO226-3
6.336
-
PNP
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1020-Y,T6NSF(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 50V TO226-3
4.284
-
PNP
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1020-Y,T6WNLF(J
Toshiba Semiconductor and Storage
TRANS PNP 2A 50V TO226-3
3.312
-
PNP
2A
50V
500mV @ 50mA, 1A
1µA (ICBO)
70 @ 500mA, 2V
900mW
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
2SA1721RTE85LF
Toshiba Semiconductor and Storage
TRANS PNP 300V 100MA TO236-3
3.472
-
PNP
100mA
300V
500mV @ 2mA, 20mA
100nA (ICBO)
30 @ 20mA, 10V
150mW
50MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini