ON Semiconductor introduces state-of-the-art 80 amp (A) power integration module

     ON Semiconductor introduces state-of-the-art 80 amp (A) Power integration modules (PIM) with industry-leading performance for demanding applications such as uninterruptible power supplies (UPS), industrial variable frequency drives and solar inverters.

     The NXH80T120L2Q0PG PIM uses ON Semiconductor's proprietary Trench second generation Field Cutover technology (FSII) and robust ultrafast quick recovery diodes in 1200 volt (V), 80 A half-bridge and 600 V, 50 A midpoint clamp T-topology for more than 98% energy efficiency. The configurable package platform uses high power direct bonded copper (DBC) substrate technology and proprietary press-fit pins to provide customers with high performance and reliable power module solutions.

     On Semiconductor's expansion into the PIM market is based on more than 30 years of experience developing automotive ignition IGBTs and Intelligent Power modules (IPMs). The NXH80T120L2Q0PG PIM utilizes ON Semiconductor's extensive packaging expertise and has a junction temperature of 175 °C, fully meeting the highest industry reliability standards. In addition, ON Semiconductor's module solutions provide customers with a fully integrated silicon and packaging supply chain, ensuring high quality and cost effectiveness.

     Paul Leonard, vice president and general manager of Power Discrete Products at ON Semiconductor, said: "Power Integrated Modules (PIMs) are a key part of our power vision, allowing us to expand into higher power industrial and automotive markets. This new, extremely robust power module platform is a testament to our commitment to provide a comprehensive portfolio of power discrete and module solutions that enable customers to meet their energy efficient, high power density solutions needs."