Taiwan Semiconductor Corporation Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 56/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
SFT15G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	7.794	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	3.708	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	6.498	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	7.416	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	5.022	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	6.876	Automotive, AEC-Q101	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	5.760	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SF2L4G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	2.286	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF2L6G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	2.610	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	3.366	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1BLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	4.194	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	8.388	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF21G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	7.830	-	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF22G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	7.524	-	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF23G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC	3.528	-	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF25G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	6.138	-	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF22G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	2.394	-	Standard	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF23G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC	8.856	-	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SRT19 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A TS-1	2.394	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
ES1GL M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	8.100	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5.598	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	5.994	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	5.328	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	2.394	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1C R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	2.376	-	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 1V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2.988	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	2.052	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1DLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	7.632	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS215L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SUB SMA	8.928	-	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS110LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SUB SMA	5.904	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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