Taiwan Semiconductor Corporation Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 54/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
SS115L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SUB SMA	5.490	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	6.210	-	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HT18G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	2.268	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
HT18G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	8.226	-	Standard	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S2K M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	5.472	-	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2M M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	5.922	-	Standard	-	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1DLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	2.772	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	2.124	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	7.740	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1JL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	5.544	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1KL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	3.348	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF2L4G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	2.232	-	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HT17G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	4.374	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SF15GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO204AL	2.808	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF16GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8.694	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BYG21MHM2G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 1.5A DO214AC	2.772	-	Avalanche	-	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SFT15G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	7.038	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2.142	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	4.860	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	4.482	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	2.376	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT18G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	8.892	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS210L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	8.334	-	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29L RQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	8.280	-	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	5.076	-	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	5.256	-	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	5.328	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	4.680	-	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	5.814	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	2.592	-	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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