Taiwan Semiconductor Corporation Gleichrichter - Single

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Spannung - Vorwärts (Vf) (Max) @ If

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Strom - Umkehrleckage @ Vr

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 4/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
RS1ML RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 800MA SUB SMA	178.032	-	Standard	1000V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
B0530W RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 500MA SOD123	24.060	-	Schottky	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
RS1JLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.2A SOD123	205.680	-	Standard	600V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 600V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS115LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123W	94.584	-	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS16LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123W	72.000	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS110LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123W	47.022	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS115LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123W	47.328	-	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
S1M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC	51.030	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RS1ML R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 800MA SUB SMA	114.606	-	Standard	1000V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123W	243.894	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
RS1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	62.526	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RSFGL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	53.316	-	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	43.800	-	Standard	600V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RSFJL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	14.640	-	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF4007 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO204AL	69.498	-	Standard	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS12 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	79.662	-	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS13 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	92.082	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
HS1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	528.534	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	1µA @ 400V	16pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS110LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123HE	279.372	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS110LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123HE	72.828	-	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1KL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	107.274	-	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	32.736	-	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123HE	267.606	-	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
HER102G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	124.746	-	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS16 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	51.888	-	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UF1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	100.440	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
UF1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	108.690	-	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SR206 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO204AC	36.198	-	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS19L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	31.470	-	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
US1M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC	48.978	-	Standard	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

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