Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 974/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
N CHANNEL MOSFET TO-257 RAD |
5.976 |
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Military, MIL-PRF-19500/614 | N-Channel | MOSFET (Metal Oxide) | 100V | 14.4A (Tc) | 12V | 200mOhm @ 14.4A, 12V | 4V @ 1mA | 40nC @ 12V | ±20V | - | - | 2W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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Microsemi |
N CHANNEL MOSFET TO-257 RAD |
2.358 |
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Military, MIL-PRF-19500/614 | N-Channel | MOSFET (Metal Oxide) | 200V | 9.4A (Tc) | 12V | 490mOhm @ 9.4A, 12V | 4V @ 1mA | 50nC @ 12V | ±20V | - | - | 2W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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Microsemi |
P CHANNEL MOSFET TO-39 |
7.740 |
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Military, MIL-PRF-19500/630 | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 12V | 350mOhm @ 6.5A, 12V | 4V @ 1mA | 45nC @ 12V | ±20V | - | - | 25W (Tc) | -55°C ~ 150°C | Through Hole | TO-205AF (TO-39) | TO-205AF Metal Can |
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Microsemi |
P CHANNEL MOSFET LCC-18 |
6.516 |
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Military, MIL-PRF-19500/630 | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 12V | 350mOhm @ 6.5A, 12V | 4V @ 1mA | 45nC @ 12V | ±20V | - | - | 25W (Tc) | -55°C ~ 150°C | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Diodes Incorporated |
MOSFET P-CH 20V TSOT26 |
3.150 |
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Diodes Incorporated |
MOSFET P-CH 20V TSOT26 |
6.480 |
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Diodes Incorporated |
MOSFET P-CH 20V TSOT26 |
3.114 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
MOSFET P-CH 20V SOT23-3 |
6.876 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 2.5V, 4.5V | 80mOhm @ 2.8A, 4.5V | 1V @ 250µA | 6nC @ 4.5V | ±10V | 443pF @ 10V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 25V 9UWLB |
3.312 |
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- | P-Channel | MOSFET (Metal Oxide) | 25V | 3.9A (Ta) | 1.8V, 4.5V | 40mOhm @ 2A, 4.5V | 1.1V @ 250µA | 7nC @ 4.5V | -6V | 850pF @ 10V | - | 940mW (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | U-WLB1515-9 | 9-UFBGA, WLBGA |
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Diodes Incorporated |
MOSFET P-CH 30V DFN2523-6 |
3.906 |
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Diodes Incorporated |
MOSFET P-CH 30V TSOT-26 |
8.946 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.3A (Ta) | 4.5V, 10V | 50mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | ±25V | 642pF @ 25V | - | 1.38W | -55°C ~ 150°C (TJ) | - | - | - |
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Diodes Incorporated |
MOSFET P-CH 30V TSOT-26 |
8.388 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.3A (Ta) | 4.5V, 10V | 50mOhm @ 6A, 10V | 2.1V @ 250µA | 11.8nC @ 10V | ±25V | 642pF @ 25V | - | 1.38W | -55°C ~ 150°C (TJ) | - | - | - |
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Diodes Incorporated |
MOSFET P-CH 20V TSOT26 |
7.470 |
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Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 20V | 7.2A (Ta) | 1.8V, 4.5V | 35mOhm @ 4A, 4.5V | 1.5V @ 250µA | 23.1nC @ 4.5V | ±12V | 2400pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4.608 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Central Semiconductor Corp |
MOSFET P-CH 20V SOT-23F |
7.344 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 2.5V, 5V | 88mOhm @ 1.2A, 5V | 1.4V @ 250µA | 12nC @ 5V | 12V | 800pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET N-CH 20V SOT-23F |
8.640 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 2.5V, 4.5V | 50mOhm @ 1.6A, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | 12V | 395pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET P-CH 30V SOT-23F |
3.312 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Central Semiconductor Corp |
MOSFET N-CH 30V SOT-23F |
2.646 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 2.5V, 4.5V | 40mOhm @ 1.8A, 4.5V | 1.2V @ 250µA | 13nC @ 4.5V | 12V | 590pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO262-3 |
3.834 |
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OptiMOS™ 3 | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 7.2mOhm @ 80A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET P-CH 60V 27.5A D2PAK |
5.418 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 27.5A (Ta) | 10V | 82mOhm @ 25A, 10V | 4V @ 250µA | 50nC @ 10V | ±15V | 1680pF @ 25V | - | 120W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 76A DPAK |
4.248 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11.3A (Ta), 79A (Tc) | 4.5V, 11.5V | 6mOhm @ 30A, 10V | 2.5V @ 250µA | 23nC @ 4.5V | ±20V | 2142pF @ 12V | - | 1.4W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 17A DPAK |
7.506 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta), 17A (Tc) | 4.5V, 10V | 64mOhm @ 9A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 365pF @ 25V | - | 3.4W (Ta), 49W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 123A DPAK |
3.366 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 3.7mOhm @ 50A, 10V | 2.5V @ 250µA | 42nC @ 4.5V | ±20V | 4760pF @ 25V | - | 4W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 90V 50A DPAK |
6.552 |
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- | N-Channel | MOSFET (Metal Oxide) | 90V | 10A (Ta), 50A (Tc) | 4.5V, 10V | 16.7mOhm @ 20A, 10V | 2.5V @ 250µA | 44nC @ 4.5V | ±20V | 4209pF @ 25V | - | 4W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 0.3A SC70 |
3.816 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 4.5V, 10V | 1Ohm @ 300mA, 10V | 2.4V @ 250µA | - | ±20V | 45pF @ 5V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | 5-TSSOP, SC-70-5, SOT-353 |
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Diodes Incorporated |
MOSFET P-CH 30V 9.9A 8-SO |
7.308 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.9A (Ta) | 6V, 10V | 11mOhm @ 12A, 20V | 3V @ 250µA | 20.5nC @ 10V | ±25V | 2246pF @ 15V | - | 1.45W (Ta) | -50°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 20V 3.3A |
2.916 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 4.5V, 10V | 85mOhm @ 3.05A, 10V | 2.2V @ 250µA | 7.8nC @ 10V | ±20V | 353pF @ 15V | Schottky Diode (Isolated) | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 600V 1.4A D-PAK |
6.948 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 9Ohm @ 700mA, 10V | 5.5V @ 25µA | 5.2nC @ 10V | ±30V | 140pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS |
MOSFET N-CH 600V |
2.034 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 9Ohm @ 700mA, 10V | 5.5V @ 25µA | 5.2nC @ 10V | ±30V | 140pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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IXYS |
MOSFET N-CH 600V |
7.326 |
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