Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 960/999
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Cree/Wolfspeed |
MOSFET N-CHANNEL 1200V 28A DIE |
2.052 |
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Z-FET™ | N-Channel | SiCFET (Silicon Carbide) | 1200V | 28A (Tj) | 20V | 220mOhm @ 10A, 20V | 4V @ 1mA | 47.1nC @ 20V | +25V, -5V | 928pF @ 800V | - | 202W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Diodes Incorporated |
MOSFET N-CH 30V 8SOIC |
4.266 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 25mOhm @ 12A, 10V | 1V @ 250µA | 26.8nC @ 10V | ±20V | 1400pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH SOT223 |
6.246 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | - | - | - | - | - | - | - | - | - | - | Surface Mount | SOT-223 | - |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8SOIC |
7.110 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 14mOhm @ 9A, 10V | 2.5V @ 1mA | 39nC @ 5V | ±20V | 4000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 4.5A SC96-3 |
8.316 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4.5V, 10V | 50mOhm @ 2A, 10V | - | - | ±20V | 350pF @ 10V | - | 1.25W (Ta) | 150°C | Surface Mount | SC-96-3, Thin Mini Mold | SC-96 |
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Microchip Technology |
MOSFET P-CHANNEL 16V 1A |
3.276 |
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TinyFET® | P-Channel | MOSFET (Metal Oxide) | 16V | 1A (Ta) | - | 450mOhm @ 100mA, 10V | 1.4V @ 250µA | - | - | - | - | 568mW (Ta) | -55°C ~ 150°C (TJ) | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | - | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
5.346 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | - | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
4.500 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | - | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 50A TO251-3 |
2.520 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | - | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CHANNEL 30V 40A TO251-3 |
4.986 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 60V 5A PW-MOLD |
5.202 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15nC @ 10V | ±20V | 700pF @ 10V | - | 20W (Tc) | 150°C | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS-RF |
MOSFET N-CH 1000V 21A TO264 |
2.466 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 500mOhm @ 10.5A, 10V | 5.5V @ 4mA | 160nC @ 10V | ±20V | 5500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXFK) | TO-264-3, TO-264AA |
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IXYS-RF |
MOSFET N-CH 1000V 24A TO264 |
2.250 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | 6600pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXFK) | TO-264-3, TO-264AA |
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IXYS-RF |
MOSFET N-CH 500V 44A TO264 |
3.598 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 120mOhm @ 22A, 10V | 5.5V @ 4mA | 156nC @ 10V | ±20V | 5500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXFK) | TO-264-3, TO-264AA |
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IXYS-RF |
MOSFET N-CH 500V 55A TO264 |
4.032 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 85mOhm @ 27.5A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | 6700pF @ 25V | - | 560W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXFK) | TO-264-3, TO-264AA |
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IXYS-RF |
MOSFET N-CH 1000V 24A SOT227B |
225 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 24A (Tc) | 10V | 390mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | 6600pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS-RF |
MOSFET N-CH 1000V 21A PLUS247-3 |
7.344 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 500mOhm @ 10.5A, 10V | 5.5V @ 4mA | 160nC @ 10V | ±20V | 5500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 10.5A TO247AD |
6.480 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 1000V | 10.5A (Tc) | 10V | 1.1Ohm @ 5.25A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 11A TO247AD |
5.274 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 1000V | 11A (Tc) | 10V | 1Ohm @ 5.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 8A TO247AD |
6.066 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 1.6Ohm @ 4A, 10V | 4V @ 1mA | 105nC @ 10V | ±30V | 1800pF @ 25V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 400V 11A TO247AD |
6.516 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 400V | 11A (Tc) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1mA | 55nC @ 10V | ±30V | 950pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 400V 86A ISOTOP |
3.384 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 400V | 86A (Tc) | 10V | 42mOhm @ 43A, 10V | 4V @ 5mA | 760nC @ 10V | ±30V | 14000pF @ 25V | - | 690W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 400V 56A ISOTOP |
5.346 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 400V | 56A (Tc) | 10V | 75mOhm @ 28A, 10V | 4V @ 2.5mA | 370nC @ 10V | ±30V | 6800pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 43A ISOTOP |
6.966 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 43A (Tc) | 10V | 120mOhm @ 21.5A, 10V | 4V @ 2.5mA | 370nC @ 10V | ±30V | 6500pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 500V 28A TO247AD |
4.626 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 28A TO247AD |
5.148 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 28A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 27A TO247AD |
3.978 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 27A (Tc) | 10V | 220mOhm @ 13.5A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 23A TO247AD |
2.916 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 250mOhm @ 11.5A, 10V | 4V @ 1mA | 130nC @ 10V | ±30V | 2950pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 23A TO247AD |
3.654 |
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POWER MOS IV® | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 300mOhm @ 11.5A, 10V | 4V @ 1mA | 210nC @ 10V | ±30V | 3500pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |