Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 912/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Microsemi |
MOSFET N-CH 200V TO-205AF |
4.032 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.5A (Tc) | 10V | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 200V 18LCC |
2.142 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 2.8A (Tc) | 10V | 800mOhm @ 2.25A, 10V | 4V @ 250µA | 14.3nC @ 10V | ±20V | - | - | 800mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 100V TO-205AF TO-39 |
6.228 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 100V 18LCC |
3.150 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 8A (Tc) | 10V | 180mOhm @ 5A, 10V | 4V @ 250mA | 6.34nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 200V TO-205AF TO-39 |
7.218 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 200V 18LCC |
3.078 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 5.5A (Tc) | 10V | 400mOhm @ 3.5A, 10V | 4V @ 250µA | 5.29nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 400V TO-205AF TO-39 |
5.256 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET N-CH 400V 18LCC |
3.870 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3A (Tc) | 10V | 1Ohm @ 2A, 10V | 4V @ 250µA | 5.75nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET N-CH 500V TO-205AF TO-39 |
7.866 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AD, TO-39-3 Metal Can |
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Microsemi |
MOSFET N-CH 500V 18LCC |
2.664 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 4.46nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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Microsemi |
MOSFET P-CH 100V TO-205AF TO-39 |
3.173 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 320mOhm @ 6.5A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-39 | TO-205AF Metal Can |
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Microsemi |
MOSFET P-CH 100V 18-LCC |
6.192 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 10V | 300mOhm @ 4.1A, 10V | 4V @ 250µA | 34.8nC @ 10V | ±20V | - | - | 800mW (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 18-ULCC (9.14x7.49) | 18-CLCC |
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ON Semiconductor |
MOSFET P-CH 30V 8-SOIC |
8.388 |
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Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.8A (Ta) | 4.5V, 10V | 20mOhm @ 8.8A, 10V | 3V @ 250µA | 40nC @ 10V | ±25V | 1845pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 85A 8-DFN |
7.380 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta), 85A (Tc) | 4.5V, 10V | 1.4mOhm @ 20A, 10V | 2.2V @ 250µA | 120nC @ 10V | ±20V | 5910pF @ 15V | - | 7.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO-220 |
8.730 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1346pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 10A TO220F |
7.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 700mOhm @ 5A, 10V | 5V @ 250µA | 35nC @ 10V | ±30V | 1346pF @ 100V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO263 |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 2010pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 14A SQ |
5.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 60A (Tc) | 4.5V, 10V | 7.3mOhm @ 14A, 10V | 2.4V @ 25µA | 14nC @ 4.5V | ±20V | 1430pF @ 15V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO220 |
4.896 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 16.1A TO-252 |
5.958 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16.1A (Tc) | 10V | 250mOhm @ 4.4A, 10V | 3.5V @ 400µA | 44nC @ 10V | ±20V | 950pF @ 100V | - | 208.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO-262 |
5.580 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 127nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO-262 |
5.634 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO220 |
5.130 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 1.1nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 38A TO220 |
5.148 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 38A (Tc) | 10V | 99mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 15nC @ 10V | ±20V | 2780pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 3.1A TO-251 |
8.208 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 8.2nC @ 10V | ±20V | 178pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 500V 2.4A TO-251 |
3.492 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6nC @ 10V | ±20V | 124pF @ 100V | - | 22W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 500V 1.7A TO-251 |
2.070 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 2.4A TO-251 |
4.770 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO-251 |
7.704 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 1.5nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 60V 12A TO-252 |
4.086 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 10V | 85mOhm @ 6A, 10V | 4V @ 25µA | 3.4nC @ 10V | ±20V | 256pF @ 25V | - | 33W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |