Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 871/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A TO-220SIS |
7.974 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 4A TO-220SIS |
5.760 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A TO-220SIS |
8.370 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A TO-220SIS |
5.706 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A TO-220SIS |
5.850 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3.5A TO-220SIS |
7.272 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 3.5A (Ta) | 10V | 1.9Ohm @ 1.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 4A DPAK-3 |
6.210 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 4A (Ta) | 10V | 2Ohm @ 2A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 3.5A DPAK-3 |
3.960 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 3.5A (Ta) | 10V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 4A DPAK-3 |
3.114 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 4A (Ta) | 10V | 1.88Ohm @ 2A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.5A DPAK-3 |
5.256 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 3.7A DPAK-3 |
8.028 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 2Ohm @ 1.9A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
3.258 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | - | 8.5mOhm @ 25A, 10V | - | 54nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 50A TO-220AB |
3.348 |
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U-MOSIV | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 50A TO-220AB |
3.924 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 50A (Tc) | - | 12mOhm @ 25A, 10V | - | 55nC @ 10V | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 50A TO-220AB |
6.534 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | - |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 5.9A VS6 |
8.208 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 30V | 5.9A (Ta) | 4.5V, 10V | 60mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | ±20V | 300pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 5.3A VS6 |
8.154 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 40V | 5.3A (Ta) | 4.5V, 10V | 81mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | ±20V | 290pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6.1A VS6 |
3.240 |
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U-MOSVI-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6.1A (Ta) | 4.5V, 10V | 59mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | ±20V | 830pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 6A VS6 |
2.052 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 14nC @ 10V | ±20V | 640pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 6A VS6 |
6.786 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 20mOhm @ 3A, 4.5V | 1.2V @ 200µA | 9nC @ 5V | ±12V | 630pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 8SOP |
7.596 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13mOhm @ 5A, 10V | 2V @ 500µA | 64nC @ 10V | +20V, -25V | 2580pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A 8SOP |
5.310 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 10mOhm @ 5.5A, 10V | 2V @ 500µA | 56nC @ 10V | +20V, -25V | 2400pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 10A 8SOP |
4.122 |
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U-MOSV-H | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 15nC @ 10V | ±20V | 1700pF @ 10V | Schottky Diode (Body) | 1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A 8SOP |
2.448 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 19nC @ 10V | ±20V | 1800pF @ 10V | Schottky Diode (Body) | - | - | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 24A 8TSON-ADV |
5.760 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta) | - | 7mOhm @ 12A, 10V | 3V @ 200µA | 26nC @ 10V | - | 1270pF @ 10V | - | - | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 13A 8TSON-ADV |
3.490 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 11.4mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | ±20V | 1350pF @ 10V | - | 700mW (Ta), 18W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A 8TSON-ADV |
4.698 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 15mOhm @ 5.5A, 10V | 2.3V @ 100µA | 15nC @ 10V | ±20V | 1100pF @ 10V | - | 700mW (Ta), 17W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A 8TSON-ADV |
7.398 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 25mOhm @ 4.5A, 10V | 2.3V @ 100µA | 9.5nC @ 10V | ±20V | 690pF @ 10V | - | 700mW (Ta), 15W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 90A TO220 |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Ta), 90A (Tc) | 10V | 7mOhm @ 20A, 10V | 3.9V @ 250µA | 53nC @ 10V | ±20V | 3430pF @ 50V | - | 2.1W (Ta), 267W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH TO-252 |
8.928 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 4mOhm @ 45A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | 7500pF @ 25V | - | 1.2W (Ta), 105W (Tc) | 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |