Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 666/999
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 250V 12A TO-220FN |
2.700 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 12A (Ta) | 10V | 210mOhm @ 6A, 10V | 4V @ 1mA | 62nC @ 10V | ±30V | 1224pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FN | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 60V 5A DPAK |
5.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 135mOhm @ 2.5A, 10V | 2.5V @ 1mA | - | ±20V | 520pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 100V 5A DPAK |
7.002 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5A (Ta) | 4V, 10V | 220mOhm @ 2.5A, 10V | 2.5V @ 1mA | - | ±20V | 520pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 500V 2A DPAK |
7.902 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2A (Ta) | 10V | 4Ohm @ 1A, 10V | 4V @ 1mA | - | ±30V | 280pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 200V 3A DPAK |
3.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3A (Ta) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 1mA | 8.5nC @ 10V | ±30V | 230pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 8A DPAK |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Ta) | 10V | 150mOhm @ 4A, 10V | 2.5V @ 1mA | - | ±20V | 520pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 60V 300MA SOT-23 |
5.490 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 300mA (Ta) | 4V, 10V | 1Ohm @ 300mA, 10V | 2.5V @ 1mA | 6nC @ 10V | ±20V | 33pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SST3 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET P-CH 30V 7.5A 8-SOIC |
8.748 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.5A (Ta) | 4V, 10V | 21mOhm @ 7.5A, 10V | 2.5V @ 1mA | 30nC @ 5V | ±20V | 2900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 9A 8-SOIC |
5.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 15mOhm @ 9A, 10V | 2.5V @ 1mA | 15nC @ 5V | 20V | 810pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 30V 9A 8-SOIC |
5.400 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4V, 10V | 14mOhm @ 9A, 10V | 2.5V @ 1mA | 39nC @ 5V | 20V | 4000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 10A 8-SOIC |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 13mOhm @ 10A, 10V | 2.5V @ 1mA | 14nC @ 5V | 20V | 1070pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 10.5A 8-SOIC |
4.194 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 10.5A (Ta) | 4V, 10V | 11.7mOhm @ 10.5A, 10V | 2.5V @ 1mA | 15nC @ 5V | 20V | 1130pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 11A 8-SOIC |
5.994 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 10.7mOhm @ 11A, 10V | 2.5V @ 1mA | 17nC @ 5V | 20V | 1300pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 12A 8-SOIC |
6.138 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4V, 10V | 10mOhm @ 12A, 10V | 2.5V @ 1mA | 25nC @ 5V | 20V | 1360pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 12.5A 8-SOIC |
2.826 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | 4V, 10V | 8.9mOhm @ 12.5A, 10V | 2.5V @ 1mA | 28nC @ 5V | 20V | 1670pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 14A 8-SOIC |
3.906 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4V, 10V | 6.7mOhm @ 14A, 10V | 2.5V @ 1mA | 37nC @ 5V | 20V | 3150pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 600V 2A DPAK |
2.790 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 5.5Ohm @ 1A, 10V | 4V @ 1mA | 25.6nC @ 10V | ±30V | 280pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 900V 26A MAX247 |
8.658 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 26A (Tc) | 10V | 260mOhm @ 14A, 10V | 4.5V @ 150µA | 490nC @ 10V | ±30V | 12000pF @ 25V | - | 450W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 900V 40A ISOTOP |
6.966 |
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SuperFREDmesh™ | N-Channel | MOSFET (Metal Oxide) | 900V | 40A (Tc) | 10V | 180mOhm @ 20A, 10V | 4.5V @ 150µA | 826nC @ 10V | ±30V | 25000pF @ 25V | - | 600W (Tc) | -65°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 900V 28A ISOTOP |
3.690 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 28A (Tc) | 10V | 260mOhm @ 14A, 10V | 4.5V @ 150µA | 490nC @ 10V | ±30V | 12000pF @ 25V | - | 500W (Tc) | -65°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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ON Semiconductor |
MOSFET PCH 60V .18/.12A SOT23 |
4.608 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 120mA (Ta) | 4.5V, 10V | 10Ohm @ 500mA, 10V | 3.5V @ 1mA | 2.5nC @ 10V | ±20V | 79pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
3.546 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 2840pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Renesas Electronics America |
MOSFET N-CH 30V 40A LFPAK |
6.696 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 5.3mOhm @ 20A, 10V | - | 40nC @ 10V | ±20V | 2200pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 50A LFPAK |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Ta) | 4.5V, 10V | 3.7mOhm @ 25A, 10V | - | 75nC @ 10V | ±20V | 4750pF @ 10V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 30A LFPAK |
6.174 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta) | 4.5V, 10V | 8.2mOhm @ 15A, 10V | - | 26nC @ 10V | ±20V | 1650pF @ 10V | - | 15W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
3.780 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71nC @ 4.5V | ±20V | 5970pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
3.636 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71nC @ 4.5V | ±20V | 5970pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A 8-SOPA |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | 4.5V, 10V | 21mOhm @ 13A, 10V | 2.3V @ 1mA | 22nC @ 10V | ±20V | 1375pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 20A 8-SOPA |
8.946 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 10V | 47mOhm @ 10A, 10V | 5V @ 1mA | 15nC @ 10V | ±20V | 1000pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 7A 8-SOPA |
7.452 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 7A (Ta) | 10V | 350mOhm @ 3.5A, 10V | 4V @ 1mA | 10nC @ 10V | ±20V | 600pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |