Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 664/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 100V 36A TO-220AB |
2.466 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 6.7A TO220FP |
7.902 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 6.7A (Tc) | 10V | 350mOhm @ 4A, 10V | 5V @ 250µA | 89nC @ 10V | ±30V | 2160pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 55V 19A TO220FP |
6.066 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 39W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 20V 32A DIRECTFET |
4.248 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71nC @ 4.5V | ±12V | 6580pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
4.788 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 3650pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 115A TO-220AB |
8.100 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 115A (Tc) | 10V | 9mOhm @ 54A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 4080pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 5A SOT223 |
4.914 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 100V 170MA SOT23-3 |
7.020 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2V @ 1mA | - | ±20V | 25pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 240V 300MA SOT-89 |
7.542 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 300mA (Ta) | 2.5V, 10V | 5.5Ohm @ 500mA, 10V | 1.8V @ 1mA | - | ±40V | 200pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC |
2.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 11.5mOhm @ 12A, 10V | 3V @ 250µA | 70nC @ 10V | ±20V | 2500pF @ 24V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 20V 2.4A 8MICRO |
4.752 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 2.5V, 4.5V | 90mOhm @ 3.3A, 4.5V | 1.5V @ 250µA | 18nC @ 4.5V | ±10V | 750pF @ 16V | Schottky Diode (Isolated) | 780mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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ON Semiconductor |
MOSFET P-CH 30V 3.3A CHIPFET |
8.784 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.3A (Ta) | 4.5V, 10V | 45mOhm @ 4.4A, 10V | 3V @ 250µA | 28nC @ 10V | ±20V | 1500pF @ 24V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 30V 4.9A CHIPFET |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4.9A (Ta) | 4.5V, 10V | 38mOhm @ 4.9A, 10V | 2V @ 250µA | 9.1nC @ 10V | ±20V | 462pF @ 24V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | ChipFET™ | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET P-CH 20V 3.3A SOT-363 |
7.776 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.3A (Ta) | 1.8V, 4.5V | 60mOhm @ 3.3A, 4.5V | 1.2V @ 250µA | 10nC @ 4.5V | ±12V | 850pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-88/SC70-6/SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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ON Semiconductor |
MOSFET N-CH 28V 9A 8-SOIC |
7.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 28V | 9A (Ta) | 4.5V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 23nC @ 4.5V | ±20V | 2400pF @ 16V | - | 930mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 8.6A 8-SOIC |
5.850 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 7.2mOhm @ 13A, 10V | 3V @ 250µA | 24nC @ 4.5V | ±20V | 1600pF @ 24V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 500V 12A TO-3-3 |
5.364 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 12A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 2700pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA (TO-3) | TO-204AA, TO-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK7 |
2.016 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 6930pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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ON Semiconductor |
MOSFET P-CH 20V 1.3A SSOT-3 |
4.464 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 1.3A (Ta) | 2.5V, 4.5V | 200mOhm @ 1.3A, 4.5V | 1.5V @ 250µA | 5nC @ 4.5V | ±8V | 330pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Panasonic Electronic Components |
MOSFET N-CH 50V .1A SS-MINI-3P |
5.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 125mW (Ta) | 125°C (TJ) | Surface Mount | SSMini3-F1 | SC-89, SOT-490 |
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Panasonic Electronic Components |
MOSFET N-CH 50V .1A SSS-MINI-3P |
2.106 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 100mW (Ta) | 125°C (TJ) | Surface Mount | SSSMini3-F1 | SOT-723 |
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ON Semiconductor |
MOSFET N-CH 20V 10.5A 8-SOIC |
7.794 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 10.5A (Ta) | 2.7V, 4.5V | 13.5mOhm @ 10.5A, 4.5V | 1V @ 250µA | 60nC @ 4.5V | ±8V | 2150pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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IXYS |
MOSFET N-CH 1KV 12.5A TO-268 |
3.078 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12.5A (Tc) | 10V | 900mOhm @ 500mA, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | - | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET N-CH 250V 60A TO-247AC |
3.078 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 35.7mOhm @ 42A, 10V | 5V @ 250µA | 240nC @ 10V | ±20V | 7290pF @ 25V | - | 430W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 7.3A 8-SOIC |
8.388 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.3A (Ta) | 10V | 22mOhm @ 4.4A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 1530pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 130A TO-220AB |
5.076 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 130A (Tc) | 10V | 6.3mOhm @ 75A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-220AB |
7.632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 97A TO-220AB |
6.048 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 97A (Tc) | 10V | 8.8mOhm @ 58A, 10V | 4V @ 100µA | 130nC @ 10V | ±20V | 3540pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 96A TO-220AB |
3.436 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 73A TO-220AB |
6.966 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |