Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 375/999
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Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CHAN 40-V POWERPAK SO-8 |
8.046 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 45.3A (Ta), 169A(Tc) | 4.5V, 10V | 1.35mOhm @ 20A, 10V | 2.4V @ 250µA | 162nC @ 10V | +20V, -16V | 7800pF @ 20V | - | 5W (Ta), 69.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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STMicroelectronics |
MOSFET N-CH 620V 3.8A I2PAK |
6.786 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 2Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22nC @ 10V | ±30V | 550pF @ 50V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 80V PPAK SO-8 |
7.056 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 80V | 19.8A (Ta), 80.8A (Tc) | 7.5V, 10V | 5.1mOhm @ 15A, 10V | 3.8V @ 250µA | 69nC @ 10V | ±20V | 3030pF @ 40V | - | 5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK 1212 |
7.254 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 11.8A (Ta), 40.5A (Tc) | 7.5V, 10V | 14.4mOhm @ 15A, 10V | 3.4V @ 250µA | 38nC @ 10V | ±20V | 1850pF @ 50V | - | 4.8W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CH 60V PPAK 1212-8S |
2.358 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 90.6A (Tc) | 7.5V, 10V | 4mOhm @ 15A, 10V | 3.6V @ 250µA | 44nC @ 10V | ±20V | 1870pF @ 30V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Vishay Siliconix |
MOSFET N-CH 100V PPAK 1212-8S |
3.580 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 12.5A (Ta), 45.3A (Tc) | 7.5V, 10V | 12.8mOhm @ 10A, 10V | 3.4V @ 250µA | 42nC @ 10V | ±20V | 2140pF @ 50V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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ON Semiconductor |
PTNG 100V |
8.388 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.7A (Ta), 50A (Tc) | 4.5V, 10V | 10.6mOhm @ 15A, 10V | 3V @ 85µA | 30nC @ 10V | ±20V | 2150pF @ 50V | - | 2.3W (Ta),52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 50A TO-252 |
5.076 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 10V | 5.6mOhm @ 20A, 10V | 3.5V @ 250µA | 85nC @ 10V | ±20V | 4000pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
AUTOMOTIVE N-CHANNEL 250 V (D-S) |
2.754 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 90nC @ 10V | ±20V | 6100pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
FET NCH 40V 123A |
7.650 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 26A (Ta), 133A (Tc) | 4.5V, 10V | 3mOhm @ 50A, 10V | 2V @ 250µA | 40.7nC @ 10V | ±20V | 2880pF @ 25V | - | 3.9W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 4-LFPAK | SOT-1023, 4-LFPAK |
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Vishay Siliconix |
MOSFET N-CH AUTO 40V TO-252 |
3.420 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 2.33mOhm @ 20A, 10V | 3.5V @ 250µA | 130nC @ 10V | ±20V | 8000F @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-4, DPak (3 Leads + Tab) |
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ON Semiconductor |
FET 40V 140A |
3.114 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CHAN 100V POWERPAK SO-8 |
4.734 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 100V | 12.4A (Ta), 45A (Tc) | 7.5V, 10V | 13.5mOhm @ 10A, 10V | 3.6V @ 250µA | 41.5nC @ 10V | ±20V | 2060pF @ 50V | - | 5W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CHAN 40V PPAK SO-8 |
8.118 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 54.8A (Ta), 219A (Tc) | 4.5V, 10V | 1.04mOhm @ 20A, 10V | 2.2V @ 250µA | 150nC @ 10V | +20V, -16V | 7300pF @ 20V | - | 6.25W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 150V |
2.574 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 7A (Ta), 25.5A (Tc) | 10V | 42mOhm @ 7A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 550pF @ 75V | - | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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STMicroelectronics |
POWER TRANSISTORS |
5.778 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.5A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 5V @ 250µA | 13nC @ 10V | ±30V | 415pF @ 100V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO252-3 |
2.124 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | 2.4V @ 83µA | 77nC @ 10V | ±20V | 5550pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET |
6.156 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 80V | 110A (Tc) | 10V | 6.6mOhm @ 55A, 10V | 4.5V @ 250µA | 45nC @ 10V | ±20V | 3200pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 620V 5A DPAK |
7.974 |
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- | N-Channel | MOSFET (Metal Oxide) | 620V | 5A (Tc) | 10V | 1.6Ohm @ 2.1A, 10V | 4.5V @ 50µA | 35nC @ 10V | ±30V | 890pF @ 50V | - | 70W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 800V 3A POWERFLAT |
5.508 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 1.75Ohm @ 2A, 10V | 5V @ 100µA | 5nC @ 10V | ±30V | 177pF @ 100V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (5x6) VHV | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 45V 120A POWERFLAT |
4.212 |
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STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 45V | 120A (Tc) | 4.5V, 10V | 1.8mOhm @ 18A, 10V | 1.2V @ 250µA | 33nC @ 4.5V | ±20V | 5170pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 150V 37A POWERPAKSO |
5.166 |
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TrenchFET® Gen IV | P-Channel | MOSFET (Metal Oxide) | 150V | 37A (Tc) | 10V | 47.5mOhm @ 10A, 10V | 4V @ 250µA | 48nC @ 10V | ±20V | 1805pF @ 75V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
TRENCH <= 40V |
3.042 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2.3V @ 250µA | 28nC @ 10V | ±20V | 1900pF @ 20V | - | 3W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHAN 45V POWERPAK SO-8 |
3.834 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 45V | 51A (Ta), 208A (Tc) | 4.5V, 10V | 1.2mOhm @ 20A, 10V | 2.3V @ 250µA | 167nC @ 10V | +20V, -16V | 8900pF @ 20V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 80V 82A 8TDSON |
4.482 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 82A (Tc) | 6V, 10V | 6.1mOhm @ 41A, 10V | 3.8V @ 41µA | 33nC @ 10V | ±20V | 2500pF @ 40V | - | 2.5W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 520V 4.4A TO-220 |
2.322 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 520V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 16.9nC @ 10V | ±30V | 529pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
R6007JND3 IS A POWER MOSFET WITH |
7.686 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 15V | 780mOhm @ 3.5A, 15V | 7V @ 1mA | 17.5nC @ 15V | ±30V | 475pF @ 100V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
RD3G600GN IS A POWER MOSFET WITH |
3.060 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Ta) | 4.5V, 10V | 3.6mOhm @ 60A, 10V | 2.5V @ 1mA | 46.5nC @ 10V | ±20V | 3400pF @ 20V | - | 40W (Ta) | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
FET NCH 40V 185A |
7.164 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 130µA | 70nC @ 10V | ±20V | 4300pF @ 20V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
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ON Semiconductor |
FET NCH 60V 155A |
4.176 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 31A (Ta), 164A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52nC @ 10V | ±20V | 3600pF @ 25V | - | 3.9W (Ta), 113W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |