Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 216/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Diodes Incorporated |
MOSFET P-CH 20V 18A PWRDI3333-8 |
3.654 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 40A (Tc) | 2.5V, 10V | 5.5mOhm @ 15A, 10V | 1.3V @ 250µA | 85nC @ 10V | ±12V | 4621pF @ 10V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 700V 8.5A TO251 |
18.180 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 8.5A (Tc) | 10V | 600mOhm @ 1.8A, 10V | 3.5V @ 90µA | 10.5nC @ 10V | ±16V | 364pF @ 400V | - | 43W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 18A DPAK |
2.100 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta) | 5V | 65mOhm @ 9A, 5V | 2V @ 250µA | 22nC @ 5V | ±15V | 675pF @ 25V | - | 2.1W (Ta), 55W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 2.9A 6-TSOP |
7.326 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 2.9A (Tc) | 4.5V, 10V | 216mOhm @ 2.2A, 10V | 3V @ 250µA | 12nC @ 10V | ±20V | 350pF @ 30V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CHANNEL 60V 17A DPAK |
6.840 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 27.4mOhm @ 10A, 10V | 2.1V @ 250µA | 3.4nC @ 4.5V | ±16V | 400pF @ 25V | - | 18W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 800V SOT-223 |
13.662 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | - | 0V | 45Ohm @ 100mA, 0V | - | - | ±15V | 115pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 125°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET N-CH 20V 3.6A SOT-23-6 |
2.790 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 2.5V, 4.5V | 55mOhm @ 7.2A, 4.5V | 700mV @ 250µA | 8.2nC @ 4.5V | ±12V | 837pF @ 10V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |
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ON Semiconductor |
MOSFET P-CH 20V 3.7A WLCSP |
6.480 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.7A (Ta) | 1.5V, 4.5V | 75mOhm @ 2A, 4.5V | 1V @ 250µA | 17nC @ 4.5V | ±8V | 1000pF @ 10V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (1x1) | 4-XFBGA, WLCSP |
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Texas Instruments |
MOSFET N-CH 30V 35A 8VSON |
19.776 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Ta) | 4.5V, 10V | 4.8mOhm @ 16A, 10V | 1.8V @ 250µA | 35nC @ 10V | ±20V | 2310pF @ 15V | - | 2.8W (Ta), 53W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (3x3.15) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P CH 30V 17A TO252 |
8.784 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta) | 4.5V, 10V | 8mOhm @ 10A, 10V | 2.1V @ 250µA | 59.2nC @ 4.5V | ±20V | 6234pF @ 15V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 30V 8.5A POWER33 |
7.056 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta), 18A (Tc) | 4.5V, 10V | 20mOhm @ 8.5A, 10V | 3V @ 250µA | 46nC @ 10V | ±25V | 2045pF @ 15V | - | 2.3W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
4.518 |
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DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5.5V, 10V | 4.2mOhm @ 40A, 10V | 2.5V @ 250µA | 20nC @ 4.5V | ±20V | 2200pF @ 25V | - | 70W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET P-CH 30V 2.4A SOT-23F |
7.272 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.2A, 4.5V | 1.4V @ 250µA | 9.6nC @ 5V | 12V | 800pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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ON Semiconductor |
MOSFET N-CH 20V 2.8A SOT23 |
8.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 2.5V, 4.5V | 85mOhm @ 3.6A, 4.5V | 1V @ 250µA | 3.5nC @ 4V | ±8V | 150pF @ 5V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Torex Semiconductor Ltd |
MOSFET P-CH 20V 2.5A SOT89 |
21.936 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 2.5V, 4.5V | 170mOhm @ 1.5A, 4.5V | - | - | ±12V | 310pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | SOT-89 | TO-243AA |
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Diodes Incorporated |
MOSFET P-CH 40V 8.5A POWERDI |
3.978 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 8.5A (Ta) | 4.5V, 10V | 11mOhm @ 9.8A, 10V | 2.5V @ 250µA | 47.5nC @ 5V | ±25V | 4234pF @ 20V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 35A DPAK |
3.888 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 52nC @ 10V | ±20V | 2610pF @ 13V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 20V 4.5A 8-SOIC |
6.282 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.7V, 4.5V | 40mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 14nC @ 4.5V | ±12V | - | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 55V 48A DPAK |
6.876 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 48A (Tc) | 10V | 22mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1597pF @ 25V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 2.3A SOT-23F |
8.226 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 2.5V, 5V | 88mOhm @ 1.2A, 5V | 1.4V @ 250µA | 12nC @ 5V | 12V | 800pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Rohm Semiconductor |
RQ6E045RP IS THE LOW ON - RESIST |
3.186 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4.5A (Ta) | 4V, 10V | 35mOhm @ 4.5A, 10V | 2.5V @ 1mA | 14nC @ 5V | ±20V | 1350pF @ 10V | - | 950mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
NCH 30V 11A MIDDLE POWER MOSFET |
4.968 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V | 9mOhm @ 4.5A, 11V | 1.5V @ 10mA | 22nC @ 4.5V | ±12V | 2410pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TSMT8 | 8-SMD, Flat Lead |
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Panasonic Electronic Components |
MOSFET N-CH 30V 15A 8HSO |
7.812 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 39A (Tc) | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 3V @ 1.45mA | 9.2nC @ 4.5V | ±20V | 1680pF @ 10V | - | 2.4W (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | HSO8-F4-B | 8-PowerSMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 4A SOP8 |
5.886 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 75mOhm @ 4A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | ±20V | 480pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 25A PPAK SO-8 |
3.618 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 4.3mOhm @ 10A, 10V | 2.2V @ 250µA | 45nC @ 10V | +20V, -16V | 2070pF @ 15V | - | 4.5W (Ta), 31W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 25V 16A PPAK 1212-8 |
8.244 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 16A (Tc) | 4.5V, 10V | 10.5mOhm @ 10A, 10V | 2.3V @ 250µA | 22nC @ 10V | ±20V | 855pF @ 10V | - | 3.5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Central Semiconductor Corp |
MOSFET P-CH 20V 650MA SOT523 |
3.438 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 650mA (Ta) | 1.8V, 4.5V | 360mOhm @ 350mA, 4.5V | 1V @ 250µA | 1.2nC @ 4.5V | 8V | 100pF @ 16V | - | 300mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Nexperia |
MOSFET N-CH 40V 79A LFPAK |
5.868 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 79A (Tc) | 10V | 7.6mOhm @ 20A, 10V | 4V @ 1mA | 26.2nC @ 10V | ±20V | 1650pF @ 25V | - | 94.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Vishay Siliconix |
MOSFET N-CH 60V 5.6A PPAK 1212-8 |
2.844 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 16A (Tc) | 4.5V, 10V | 26mOhm @ 5.7A, 10V | 2.5V @ 250µA | 24nC @ 10V | ±20V | 980pF @ 30V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 40V 100A D2PAK |
96.552 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.2mOhm @ 25A, 10V | 2.8V @ 1mA | 125nC @ 10V | ±16V | 8020pF @ 25V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |