Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 149/999
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Teilenummer |
Hersteller |
Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Nexperia |
MOSFET N-CH 55V 54A D2PAK |
32.196 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 54A (Tc) | 4.5V, 10V | 18mOhm @ 25A, 10V | 2V @ 1mA | - | ±10V | 2210pF @ 25V | - | 118W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-263-3 |
90.390 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 650V 9.7A DPAK |
23.442 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8L |
23.154 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 15A, 10V | 2.4V @ 250µA | 150nC @ 20V | +20V, -16V | 7150pF @ 20V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 22A 8-SOP ADV |
48.144 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 10V | 7.5mOhm @ 11A, 10V | 4V @ 300µA | 31nC @ 10V | ±20V | 2320pF @ 30V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 600V 8THINPAK |
44.700 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 6.7A (Tc) | 10V | 650mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | 557pF @ 100V | - | 56.8W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | 8-ThinPak (5x6) | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 7A TO252 |
21.312 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | 434pF @ 100V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
30V N-CHANNEL NEXFET POWER MOSFE |
13.092 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 123A (Tc) | 4.5V, 10V | 3.4mOhm @ 16A, 10V | 1.7V @ 250µA | 54nC @ 10V | ±20V | 3640pF @ 15V | - | 3.1W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 185A 8PDFN |
24.432 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 185A (Tc) | 4.5V, 10V | 1.8mOhm @ 29A, 10V | 2.5V @ 250µA | 56nC @ 10V | ±20V | 3479pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 100A D2PAK |
34.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.15V @ 1mA | 64nC @ 10V | ±20V | 3907pF @ 15V | - | 114W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 37A POWERPAKSO |
24.090 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 37A (Tc) | 6V, 10V | 16.2mOhm @ 15A, 10V | 3.6V @ 250µA | 22nC @ 6V | ±20V | 1360pF @ 50V | - | 44.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET N-CH 100V 37A D2PAK |
42.210 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 37A (Tc) | 10V | 26.8mOhm @ 15A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 1624pF @ 50V | - | 103W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 500V 2.3A IPAK |
46.950 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 2.3A (Tc) | 10V | 3.3Ohm @ 1.15A, 10V | 4.5V @ 50µA | 15nC @ 10V | ±30V | 280pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 2.8A IPAK |
27.522 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.8A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 8nC @ 10V | ±30V | 331pF @ 25V | - | 57W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Diodes Incorporated |
MOSFET N-CHA 60V 13.5A SO8 |
23.976 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13.5A (Ta) | 4.5V, 10V | 6mOhm @ 20A, 10V | 3V @ 250µA | 47.1nC @ 10V | ±20V | 2962pF @ 30V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 60V 22A SOT428 |
19.050 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta) | 4V, 10V | - | - | - | ±20V | - | - | 20W (Ta) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET NCH 700V 4A TO251 |
14.796 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8nC @ 10V | ±20V | 163pF @ 100V | Super Junction | 42W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 170A 8PDFN |
21.972 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 170A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 4224pF @ 20V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CHANNEL 40V TO252AA |
16.398 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | - | 10V | - | - | 65nC @ 10V | - | - | - | - | 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 100V 46A D2PAK |
56.580 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 46A (Tc) | 5V, 10V | 27mOhm @ 25A, 10V | 2V @ 1mA | 33nC @ 5V | ±15V | 4360pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 75V 67A D2PAK |
33.894 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 67A (Tc) | 5V, 10V | 14mOhm @ 25A, 10V | 2V @ 1mA | 35nC @ 5V | ±15V | 4034pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 150V 20.2A 1212-8S |
23.106 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 20.2A (Tc) | 7.5V, 10V | 58mOhm @ 10A, 10V | 4.2V @ 250µA | 14.5nC @ 10V | ±20V | 420pF @ 75V | - | 52W (Tc) | -55°C ~ 150°C (TA) | Surface Mount | PowerPAK® 1212-8S (3.3x3.3) | PowerPAK® 1212-8S |
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Nexperia |
MOSFET N-CH 40V 75A D2PAK |
28.620 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 32nC @ 5V | ±15V | 3600pF @ 25V | - | 157W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Diodes Incorporated |
MOSFET NCH 60V 16.5A POWERDI |
24.504 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 16.5A (Ta), 88A (Tc) | 10V | 8mOhm @ 20A, 10V | 4V @ 250µA | 40.1nC @ 10V | ±20V | 2597pF @ 30V | - | 1.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 40V 141A 8PDFN |
26.700 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 141A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | 2.5V @ 250µA | 47nC @ 10V | ±20V | 3130pF @ 20V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 12.6A 8DSO |
21.402 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12.6A (Ta) | 10V | 8mOhm @ 14.9A, 10V | 2.2V @ 250µA | 136nC @ 10V | ±25V | 5890pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 100V 28A D2PAK |
50.214 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 50mOhm @ 14A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 1240pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 600V 1A IPAK |
18.762 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 1A (Tc) | 10V | 11.5Ohm @ 500mA, 10V | 4V @ 250µA | 6.2nC @ 10V | ±30V | 170pF @ 25V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 20V 16.5A POWER33 |
26.358 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 16.5A (Tc) | 4.5V, 10V | 5mOhm @ 16.5A, 10V | 3V @ 250µA | 62nC @ 10V | ±20V | 3380pF @ 10V | - | 2W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 30V 205A 8PDFN |
24.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 205A (Tc) | 4.5V, 10V | 1.5mOhm @ 32A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 4243pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |